Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. IGBT IN TO–247 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED • Industry Standard High Power TO–247 Package with Isolated Mounting Hole • High Speed Eoff: 160 J/A typical at 125°C • High Short Circuit Capability – 10 s minimum • Robust High Voltage Termination C G G C E E CASE 340F–03, Style 4 TO–247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) Rating VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 28 20 56 Adc PD 174 1.39 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 s RθJC RθJA 0.7 35 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MGW20N120 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1200 — — 870 — — mV/°C 25 — — Vdc — — — — 100 2500 — — 250 — — — 3.00 2.36 2.90 3.54 — 4.99 4.0 — 6.0 10 8.0 — mV/°C gfe — 12 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) BVCES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BVECS Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 20 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Transfer Capacitance Cies — 1860 — Coes — 122 — Cres — 29 — td(on) — 88 — tr — 103 — td(off) — 190 — tf — 284 — Eoff — 1.65 3.75 mJ td(on) — 83 — ns tr — 107 — td(off) — 216 — tf — 494 — Eoff — 3.19 — mJ QT — 62 — nC Q1 — 21 — Q2 — 25 — — 13 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 25°C) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 125°C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 720 Vdc, IC = 20 Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGW20N120 TYPICAL ELECTRICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 60 VGE = 20 V TJ = 25°C 50 17.5 V 40 12.5 V 30 20 10 V 10 0 0 2 4 6 50 40 12.5 V 30 10 V 20 10 0 8 0 2 TJ = 125°C 40 20 25°C 8 9 10 11 12 13 14 15 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) VCE = 10 V 250 µs PULSE WIDTH 7 VGE = 15 V 250 µs PULSE WIDTH IC = 20 A 3 15 A 10 A 2 1 – 50 0 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pF) Cies 1000 Coes 10 Cres 0 5 10 15 20 25 GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 100 150 Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature TJ = 25°C 100 50 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics VCE = 0 V 8 4 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 10000 6 Figure 2. Output Characteristics, TJ = 125°C 60 6 4 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25°C 5 15 V 17.5 V VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 0 VGE = 20 V TJ = 125°C 15 V IC, COLLECTOR CURRENT (AMPS) 60 16 QT 14 12 10 Q1 8 Q2 6 TJ = 25°C IC = 20 A 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Qg, TOTAL GATE CHARGE (nC) Figure 6. Gate–to–Emitter Voltage versus Total Charge 3 VCC = 720 V VGE = 15 V TJ = 25°C 5 IC = 25 A 4 15 A 3 10 A 2 1 0 10 15 20 25 30 35 40 45 TOTAL SWITCHING ENERGY LOSSES (mJ) IC = 20 A 3 15 A 2 10 A 1 25 50 75 100 125 Figure 7. Total Switching Losses versus Gate Resistance Figure 8. Total Switching Losses versus Case Temperature VCC = 720 V VGE = 15 V RG = 20 Ω TJ = 125°C 2 10 4 TC, CASE TEMPERATURE (°C) 3 1 VCC = 720 V VGE = 15 V RG = 20 Ω RG, GATE RESISTANCE (OHMS) 5 4 5 0 50 12 14 16 18 20 I , INSTANTANEOUS FORWARD CURRENT (AMPS) F TOTAL SWITCHING ENERGY LOSSES (mJ) 6 TOTAL SWITCHING ENERGY LOSSES (mJ) MGW20N120 40 30 TJ = 125°C 20 TJ = 25°C 10 0 0 1 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) 2 3 4 5 VFM, FORWARD VOLTAGE DROP (VOLTS) Figure 9. Turn–Off Losses versus Collector–to–Emitter Current IC, COLLECTOR–TO–EMITTER CURRENT (A) 150 Figure 10. Maximum Forward Drop versus Instantaneous Forward Current 100 10 1 0.1 VGE = 15 V RGE = 20 Ω TJ = 125°C 1 10 100 1000 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 11. Reverse Biased Safe Operating Area 4 Motorola TMOS Power MOSFET Transistor Device Data MGW20N120 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E+00 1.0E+01 t, TIME (s) Figure 12. Thermal Response Motorola TMOS Power MOSFET Transistor Device Data 5 MGW20N120 PACKAGE DIMENSIONS 0.25 (0.010) M –T– –Q– T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E –B– C 4 U A R 1 K L 2 3 –Y– P F H V J D 0.25 (0.010) M Y Q G S CASE 340F–03 TO–247AE ISSUE E DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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