ETC GD150HFL120C2S

GD150HFL120C2S
IGBT Module
STARPOWER
IGBT
SEMICONDUCTORTM
GD150HFL120C2S
Molding Type Module
1200V/150A 2 in one-package
General Description
STARPOWER IGBT Power Module provides ultra
Low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters.
Features
z
z
z
z
z
z
High short circuit capability, self limiting to 6*IC
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Equivalent Circuit Schematic
Typical Applications
z
z
z
AC inverter drives
Switching mode power supplies
Electronic welders
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol
VCES
Description
Collector-Emitter Voltage
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
GD150HFL120C2S
Units
1200
V
1/8
Rev.C
GD150HFL120C2S
Symbol
IGBT Module
Description
VGES
IC
GD150HFL120C2S
Units
Gate-Emitter Voltage
±20
V
Collector Current
300
150
A
A
300
A
@ TC=25℃,Tj=150℃
@ TC=80℃,Tj=150℃
ICM(1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
150
A
IFM
Diode Maximum Forward Current
300
A
PD
Maximum power Dissipation @ Tj=150℃
1422
W
TSC
Short Circuit Withstand Time @ Tj=125℃
10
μs
Tj
Operating Junction Temperature
-40 to +150
℃
TSTG
Storage Temperature Range
-40 to +125
℃
2
tp=1ms
I t-value, Diode
VR=0V,t=10ms,Tj=125℃
4800
A2s
VISO
Isolation Voltage
2500
V
2.5 to 5
N.m
3 to 6
N.m
Mounting Torque
RMS,f=50Hz,t=1min
Power Terminal Screw:M6
Mounting Screw:M6
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V(BR)CES
Collector-Emitter
Breakdown Voltage
Tj=25℃
ICES
Collector Cut-Off Current
VCE=VCES,VGE=0V,
Tj=25℃
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25℃
400
nA
1200
V
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Test Conditions
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
IC=6mA,VCE=VGE,
Tj=25℃
Min.
Typ.
Max.
Units
5.0
6.2
7.0
V
IC=150A,VGE=15V,
Tj=25℃
1.9
IC=150A,VGE=15V,
Tj=125℃
2.1
V
Switching Characteristics
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Test Conditions
VCC=600V,IC=150A,
RG=6.8Ω,VGE=±15V,
Tj=25℃
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
Min.
Typ.
Max.
Units
190
ns
60
ns
460
ns
2/8
Rev.C
GD150HFL120C2S
tf
Fall Time
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
td(on)
IGBT Module
55
ns
11.2
mJ
9.8
mJ
Turn-On Delay Time
220
ns
tr
Rise Time
60
ns
td(off)
Turn-Off Delay Time
530
ns
tf
Fall Time
75
ns
Eon
Turn-On Switching
Loss
16.7
mJ
Eoff
Turn-Off Switching
Loss
15.3
mJ
Cies
Input Capacitance
10.6
nF
Coes
Output Capacitance
0.71
nF
Cres
Reverse Transfer
Capacitance
0.47
nF
650
A
VCC=600V,IC=150A,
RG=6.8Ω,VGE=±15V,
Tj=25℃
VCC=600V,IC=150A,
RG=6.8Ω,VGE=±15V,
Tj=125℃
VCE=25V,f=1MHz,
VGE=0V
tSC≤10μs,VGE=15V,
Tj=125℃,VCC=900V,
VCEM≤1200V
ISC
SC Data
LCE
Stray inductance
RCC’+EE’
Module lead
resistance, terminal to
chip
20
TC=25℃
nH
0.35
mΩ
Electrical Characteristics of DIODE TC=25℃ unless otherwise noted
Symbol
Parameter
VF
Diode Forward
Voltage
Qr
Diode Reverse
Recovery Charge
IRM
Diode Peak
Reverse Recovery
Current
Erec
Reverse Recovery
Energy
Test Conditions
IF=150A
IF=150A,
VR=600V,
di/dt=-4800A/μs,
VGE=-15V
Min.
Typ.
Tj=25℃
2.1
Tj=125℃
2.2
Tj=25℃
7
Tj=125℃
18
Tj=25℃
150
Tj=125℃
190
Tj=25℃
4
Tj=125℃
8
Max.
Units
V
μC
A
mJ
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case (IGBT Part, per 1/2 Module)
0.09
K/W
RθJC
Junction-to-Case (DIODE Part, per 1/2 Module)
0.24
K/W
RθCS
Case-to-Sink (Conductive grease applied)
Weight
Weight of Module
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
0.035
K/W
300
g
3/8
Rev.C
GD150HFL120C2S
Fig 1. Typical Output Characteristics
Fig 3. Switching Loss vs. Collector Current
©2011 STARPOWER Semiconductor Ltd.
IGBT Module
Fig 2. Typical Transfer Characteristics
Fig 4. Switching Loss vs. Gate Resistor
2/11/2011
4/8
Rev.C
GD150HFL120C2S
Fig 5. Gate Charge Characteristics.
IGBT Module
Fig 6. Typical Capacitance vs.
Collector-Emitter Voltage
Fig 7. Typical Switching Times vs. IC
Fig 8. Typical Switching Times vs. Gate
Resistance RG
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
5/8
Rev.C
GD150HFL120C2S
Fig 9. Typical Forward Characteristics (diode)
©2011 STARPOWER Semiconductor Ltd.
IGBT Module
Fig 10. Transient thermal impedance
2/11/2011
6/8
Rev.C
GD150HFL120C2S
IGBT Module
Package Dimension
Dimensions in Millimeters
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
7/8
Rev.C
GD150HFL120C2S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained staff.
You and your technical departments will have to evaluate the suitability of the product for the
intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or
which concerns the specific application of our product, please contact the sales office, which is
responsible for you (see www.powersemi.cc), For those that are specifically interested we may
provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on
the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life
support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
8/8
Rev.C