Order this document
by MJE18604D2/D
SEMICONDUCTOR TECHNICAL DATA
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(.* *'+#+,(* .#,"
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
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The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
• Low Base Drive Requirement
• High DC Current Gain (30 Typical) @ IC = 400 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Breakdown Voltage
VCEO
800
Vdc
Collector–Emitter Sustaining Voltage @ R = 200 Ω
VCER
800
Vdc
Collector–Base Breakdown Voltage
VCBO
1600
Vdc
Collector–Emitter Breakdown Voltage
VCES
1600
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
3
8
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
100
0.8
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
1.25
62.5
_C/W
TL
260
_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJE18604D2
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCER(sus)
800
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
1600
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
Collector Cutoff Current
(VCBO = Rated VCBO, IB = 0)
ICBO
100
µAdc
ICES
100
1000
100
µAdc
IEBO
500
µAdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH, RBE = 200 Ω)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 1300 V, VEB = 0)
Emitter–Cutoff Current
(VEB = 11 Vdc, IC = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
14
Vdc
ON CHARACTERISTICS
VBE(sat)
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.1 Adc)
Vdc
@ TC = 25°C
@ TC = 125°C
0.8
0.6
1.1
1
(IC = 1 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
0.8
1
1
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.9
0.8
1.2
1.1
@ TC = 25°C
@ TC = 125°C
1
1.7
1.25
(IC = 0.5 Adc, IB = 50 mAdc)
@ TC = 25°C
@ TC = 125°C
2.1
4
2.4
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
3.7
5
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 25 mAdc)
Vdc
hFE
DC Current Gain
(IC = 0.4 Adc, VCE = 3 Vdc)
(IC = 5 mAdc, VCE = 10 Vdc)
@ TC = 25°C
@ TC = 125°C
20
6
40
10
@ TC = 25°C
@ TC = 125°C
20
20
35
55
—
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
IC = 0.3 Adc
IB1 = 50 mA
VCC = 300 V
IC = 0.5 Adc
IB1 = 50 mA
VCC = 300 V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
@ 3 µs
@ TC = 25°C
@ TC = 125°C
2.6
5.4
@ 1 µs
@ TC = 25°C
@ TC = 125°C
9.7
18
@ 3 µs
@ TC = 25°C
@ TC = 125°C
6.4
12.3
VCE(dsat)
V
4.7
9.3
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 0.4 Adc)
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
@ TC = 25°C
@ TC = 125°C
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
@ TC = 125°C
(IF = 1.0 Adc, di/dt = 10 A/µs)
@ TC = 25°C
@ TC = 125°C
2
VEC
tfr
0.9
0.6
1.2
1.05
0.7
1.5
0.9
1.5
V
µs
1.15
1.6
Motorola Bipolar Power Transistor Device Data
MJE18604D2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance
(VCE = 8 Vdc)
fT
13
Cob
230
500
pF
Cib
480
1000
pF
MHz
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Delay Time
@ TC = 25°C
@ TC = 125°C
td
95
110
150
ns
@ TC = 25°C
@ TC = 125°C
tr
475
900
750
ns
@ TC = 25°C
@ TC = 125°C
ts
700
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
675
775
850
ns
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
440
570
ns
@ TC = 25°C
@ TC = 125°C
ts
4
5.9
µs
@ TC = 25°C
@ TC = 125°C
tf
375
675
ns
Turn–off Time
@ TC = 25°C
@ TC = 125°C
toff
4.5
6.6
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
ton
465
550
@ TC = 25°C
@ TC = 125°C
ts
@ TC = 25°C
@ TC = 125°C
tf
Turn–off Time
@ TC = 25°C
@ TC = 125°C
Turn–on Time
Rise Time
Storage Time
Storage Time
Fall Time
Storage Time
Fall Time
Storage Time
Fall Time
IC = 0.5 Adc
IB1 = 66 mAdc
IB2 = 390 mAdc
VCC = 125 V
IC = 0.3 Adc
IB1 = 50 mAdc
IB2 = 50 mAdc
VCC = 125 V
IC = 0.3 Adc
IB1 = 50 mAdc
IB2 = 150 mAdc
VCC = 125 V
IC = 0.5 Adc
IB1 = 50 mAdc
IB2 = 50 mAdc
VCC = 125 V
Turn–off Time
Delay Time
Rise Time
Storage Time
Fall Time
IC = 0.5 Adc
IB1 = 50 mAdc
IB2 = 250 mAdc
VCC = 125 V
Motorola Bipolar Power Transistor Device Data
400
910
600
ns
800
ns
800
550
1000
ns
toff
1.5
2.4
1.75
µs
@ TC = 25°C
@ TC = 125°C
ton
550
1300
ns
@ TC = 25°C
@ TC = 125°C
ts
4.35
5
µs
@ TC = 25°C
@ TC = 125°C
tf
500
2000
ns
@ TC = 25°C
@ TC = 125°C
toff
4.8
7
µs
@ TC = 25°C
td
100
300
ns
@ TC = 25°C
tr
300
800
ns
@ TC = 25°C
ts
1
1.2
µs
@ TC = 25°C
tf
200
350
ns
500
1800
3
MJE18604D2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)
Fall Time
Storage Time
Crossover Time
IC = 300 mAdc
IB1 = 50 mAdc
IB2 = 50 mAdc
VZ = 300 V
LC = 200 µH
Fall Time
Storage Time
Crossover Time
IC = 300 mAdc
IB1 = 50 mAdc
IB2 = 150 mAdc
VZ = 300 V
LC = 200 µH
Fall Time
Storage Time
Crossover Time
IC = 500 mAdc
IB1 = 50 mAdc
IB2 = 50 mAdc
VZ = 300 V
LC = 200 µH
Fall Time
Storage Time
Crossover Time
4
IC = 500 mAdc
IB1 = 50 mAdc
IB2 = 250 mAdc
VZ = 300 V
LC = 200 µH
@ TC = 25°C
@ TC = 125°C
tf
170
210
ns
@ TC = 25°C
@ TC = 125°C
ts
1.7
2.7
µs
@ TC = 25°C
@ TC = 125°C
tc
150
400
ns
@ TC = 25°C
@ TC = 125°C
tf
160
150
@ TC = 25°C
@ TC = 125°C
ts
@ TC = 25°C
@ TC = 125°C
tc
160
160
@ TC = 25°C
@ TC = 125°C
tf
165
700
ns
@ TC = 25°C
@ TC = 125°C
ts
3
4.1
µs
@ TC = 25°C
@ TC = 125°C
tc
200
800
ns
@ TC = 25°C
@ TC = 125°C
tf
110
130
@ TC = 25°C
@ TC = 125°C
ts
@ TC = 25°C
@ TC = 125°C
tc
0.7
250
ns
1
µs
250
ns
1.1
0.7
175
ns
1
µs
200
ns
1.8
130
250
Motorola Bipolar Power Transistor Device Data
MJE18604D2
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
5
MJE18604D2
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJE18604D2/D*
MJE18604D2/D