Order this document by MMBF2202PT1/D SEMICONDUCTOR TECHNICAL DATA $ ! " # !""# !" Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 2.2 OHM 3 DRAIN CASE 419–02, STYLE 7 SC–70/SOT–323 • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC–70/SOT–323 Surface Mount Package Saves Board Space 1 GATE 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Derate above 25°C ID ID IDM 300 240 750 mAdc PD 150 1.2 mW mW/°C Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient RθJA 833 °C/W TL 260 °C Drain–to–Source Voltage Maximum Lead Temperature for Soldering Purposes, for 10 seconds DEVICE MARKING P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMBF2202PT1 7″ 8 mm embossed tape 3000 MMBF2202PT3 13″ 8 mm embossed tape 10,000 GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1995 1 MMBF2202PT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 — — Vdc — — — — 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) µAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) rDS(on) — — 1.5 2.0 2.2 3.5 gFS — 600 — mMhos pF ON CHARACTERISTICS(1) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss — 50 — Output Capacitance (VDS = 5.0 V) Coss — 45 — Transfer Capacitance (VDG = 5.0 V) Crss — 20 — td(on) — 2.5 — tr — 1.0 — td(off) — 16 — tf — 8.0 — QT — 2700 — pC IS — — 0.3 A Pulsed Current ISM — — 0.75 Forward Voltage(2) VSD — 1.5 — SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (VDD = –15 Vdc, RL = 75 Ω, ID = 200 mAdc, VGEN = –10 V, RG = 6.0 Ω) Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 8 ID = 200 mA 6 4 2 0 2 4.0 rDS(on) , ON RESISTANCE (OHMS) rDS(on) , ON RESISTANCE (OHMS) 10 0 1 2 3 4 5 6 7 8 9 3.5 3.0 2.5 2.0 VGS = 10 V ID = 200 mA 1.5 1.0 0.5 0 10 VGS = 4.5 V ID = 50 mA – 40 – 20 0 20 40 60 80 100 120 140 VGS, GATE–SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. On Resistance versus Gate–Source Voltage Figure 2. On Resistance versus Temperature 160 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF2202PT1 1.0 0.9 5 4 I D, DRAIN CURRENT (AMPS) rDS(on) , ON RESISTANCE (OHMS) 6 VGS = 4.5 V 3 VGS = 10 V 2 1 0.8 0.7 – 55 0.6 0.5 150 25 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 3. On Resistance versus Drain Current Figure 4. Transfer Characteristics 5.5 6.0 9 10 ID(on), DRAIN CURRENT (AMPS) 0.8 25° 0.1 150° 0.01 VGS = 5 V 0.7 0.6 VGS = 4.5 V 0.5 VGS = 4 V 0.4 0.3 VGS = 3.5 V 0.2 VGS = 3 V 0.1 0.001 4.5 5.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 1 IS , SOURCE CURRENT (AMPS) 0 ID, DRAIN CURRENT (AMPS) 0 0.5 1.0 1.5 2.0 0 2.5 0 1 2 3 4 5 6 7 8 VSD, SOURCE–DRAIN FORWARD VOLTAGE (VOLTS) VDS, DRAIN–SOURCE VOLTAGE (VOLTS) Figure 5. Source–Drain Forward Voltage Figure 6. On Region Characteristics 50 45 VGS = 0 V f = 1 MHz C, CAPACITANCE (pF) 40 35 30 25 20 Ciss 15 Coss 10 5 0 Crss 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBF2202PT1 INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.025 0.65 0.65 0.075 1.9 0.035 0.9 0.028 inches 0.7 mm SC–70/SOT–323 SC–70/SOT–323 POWER DISSIPATION The power dissipation of the SC–70/SOT–323 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SC–70/SOT–323 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W for the SC–70/SOT–323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SC–70/SOT–323 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF2202PT1 PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D V G C 0.05 (0.002) R N J K H DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 STYLE 7: PIN 1. DRAIN 2. GATE 3. COLLECTOR CASE 419–02 SC–70/SOT–323 ISSUE F Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MMBF2202PT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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