Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. • High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.0 Vdc IC 60 mA PD(max) 333 4.44 mW mW/°C Collector Current — Continuous Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Tstg – 55 to +150 °C TJmax 150 °C Symbol Value Unit RθJC 225 °C/W THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case DEVICE MARKING MMBR911LT1 = 7P NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MMBR911LT1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) V(BR)CEO 12 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 20 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 2.0 — — Vdc ICBO — — 50 nAdc hFE 30 — 200 — Ccb — — 1.0 pF fT — 6.0 — GHz — — 17 11 — — — — 2.0 2.9 — — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 30 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain–Bandwidth Product (VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz) FUNCTIONAL TESTS Gain @ Noise Figure (IC = 10 mAdc, VCE = 10 Vdc) GNF f = 0.5 GHz f = 1.0 GHz Noise Figure (IC = 10 mAdc, VCE = 10 Vdc) dB NF f T, CURRENT GAIN-BANDWIDTH PRODUCT (GHz) f = 0.5 GHz f = 1.0 GHz dB 10 8 6 4 2 0 VCE = 10 V f = 1 GHz 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 1. Current Gain–Bandwidth versus Collector Current @ 1.0 GHz MMBR911LT1 2 MOTOROLA RF DEVICE DATA 2.5 Ccb , C ob , OUTPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) 2.5 2 1.5 Cib 1 0.5 0 f = 1 MHz 0 1 2 f = 1 MHz 2 1.5 1 Cob 0.5 0 3 Ccb 0 1 2 3 4 5 6 7 8 9 VBE, BASE–EMITTER VOLTAGE (Vdc) Vcb, COLLECTOR–BASE VOLTAGE (Vdc) Figure 2. Input Capacitance versus Base–Emitter Voltage Figure 3. Output Capacitances versus Collector–Base Voltage 20 10 5 16 4 NF, NOISE FIGURE (dB) G NF , GAIN AT NOISE FIGURE (dB) f = 500 MHz 1 GHz 12 8 4 f = 1 GHz 3 2 500 MHz VCE = 10 V VCE = 10 V 0 10 20 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. Gain at Noise Figure versus Collector Current Figure 5. Noise Figure versus Collector Current 5 30 4 25 GNF 3 15 NF 10 2 5 VCE = 10 V IC = 10 mA 0.3 0.5 1 1.5 1 0 2 G U MAX AND |S21 | 2 (dB) 20 0 0.2 0 IC, COLLECTOR CURRENT (mA) 25 G NF , GAIN AT NOISE FIGURE (dB) 0 30 NF, NOISE FIGURE (dB) 0 VCE = 10 V IC = 30 mA GUMAX 20 |S21|2 15 10 5 0.2 0.3 0.5 1 1.5 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 6. Gain at Noise Figure and Noise Figure versus Frequency Figure 7. Maximum Unilateral Gain and Insertion Gain versus Frequency MOTOROLA RF DEVICE DATA 2 MMBR911LT1 3 +j50 +90° +j25 +120° +j100 +60° f = 0.2 GHz +j150 +150° +j10 S21 0.5 2 1.5 1 1 0.5 f = 0.2 GHz 2 +j250 2 10 0 S11 +j500 1.5 25 1 50 0.5 1 2 f = 0.2 GHz – j10 180° 100 150 250 500 16 14 12 10 8 6 4 2 0.1 0.5 1.5 0.2 0.3 0° 0.4 S12 S21 – j500 f = 0.2 GHz +30° S12 – j250 S22 – 30° –150° – j150 – j100 – j25 – 60° –120° – 90° – j50 Figure 8. Input and Output Reflection Coefficients versus Frequency VCE = 10 V, IC = 30 mA Figure 9. Forward and Reverse Transmission Coefficients versus Frequency VCE = 10 V, IC = 30 mA S11 S21 S12 S22 VCE (Volts) IC (mA) f (MHz) |S11| ∠Ăφ |S21| ∠Ăφ |S12| ∠Ăφ |S22| ∠Ăφ 10 2.0 200 500 1000 1500 2000 0.82 0.60 0.47 0.46 0.47 – 45 – – 96 – – 149– – 179– 162 4.14 3.23 2.16 1.59 1.35 145 112 85 71 57 0.06 0.09 0.11 0.13 0.16 66 49 49 55 62 0.88 0.71 0.62 0.58 0.56 – 16 – 27 – 34 – 43 – 51 5.0 200 500 1000 1500 2000 0.66 0.43 0.37 0.38 0.40 – 63– – 117– – 163– 176 160 8.63 5.29 3.05 2.17 1.81 134 100 82 70 57 0.05 0.07 0.11 0.15 0.19 64 58 63 65 65 0.75 0.55 0.48 0.45 0.43 – 25 – 31 – 36 – 44 – 51 10 200 500 1000 1500 2000 0.49 0.33 0.32 0.35 0.37 – 83 – – 134– – 171– 173 159 12.70 6.42 3.53 2.46 2.04 124 94 80 69 58 0.04 0.07 0.12 0.16 0.20 65 66 70 69 66 0.62 0.44 0.41 0.38 0.35 – 30 – 32 – 36 – 45 – 52 20 200 500 1000 1500 2000 0.36 0.28 0.29 0.33 0.36 – 103– – 149– – 176– 172 158 15.25 6.95 3.73 2.60 2.14 114 90 78 68 58 0.03 0.06 0.12 0.17 0.21 69 72 73 71 67 0.52 0.39 0.37 0.34 0.32 – 32 – 30 – 35 – 43 – 52 30 200 500 1000 1500 2000 0.32 0.27 0.29 0.34 0.37 – 114– – 156– – 178– 170 156 15.64 6.92 3.71 2.58 2.13 109 88 78 68 57 0.03 0.06 0.12 0.16 0.21 71 73 74 72 68 0.48 0.38 0.37 0.34 0.32 – 29 – 27 – 33 – 44 – 51 Table 1. Common Emitter S–Parameters MMBR911LT1 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AF MOTOROLA RF DEVICE DATA MMBR911LT1 5 Motorola reserves the right to make changes without further notice to any products herein. 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