Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. • To be used in Class AB for PCN and Cellular Radio Applications 4.5 W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON • Specified 26 V, 1.88 GHz Characteristics Output Power — 4.5 Watts Gain — 10 dB Typ Efficiency — 45% Typ • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 319–07, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCER 40 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector–Current — Continuous IC 0.7 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 15 0.2 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 5 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ω) V(BR)CER 40 — — Vdc Emitter–Base Breakdown Voltage (IE = 5 mAdc) V(BR)EBO 3.5 — — Vdc Collector–Base Breakdown Voltage (IC = 10 mAdc) V(BR)CBO 40 — — Vdc — — 5 mA OFF CHARACTERISTICS Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) ICER (1) Thermal resistance is determined under specified RF operating condition. (continued) REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF6402 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 50 — 200 — Cob — 6 — pF Gp 9 10 — dB Collector Efficiency (VCC = 26 V, Pout = 4 W, f = 1.88 GHz) η 40 43 — % Load Mismatch (VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Ψ ON CHARACTERISTICS DC Current Gain (IC = 0.1 Adc, VCE = 20 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 26 V, Pout = 4 W, ICQ = 40 mA, f = 1.88 GHz) No Degradation in Output Power 1.84 Zin 1.75 f = 1.95 GHz 1.75 ZOL* Zo = 50 Ω f = 1.95 GHz f (GHz) Zin (Ω) ZOL* (Ω) 1.75 0.12 + j0.18 0.06 + j0.05 1.84 0.13 + j0.2 0.06 + j0.04 1.95 0.15 + j0.16 0.06 + j0.02 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCE = 26 V, ICQ = 40 mA, Pout = 4.5 W MRF6402 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 0 Pout , Output Power (Watts) Intermodulation Distortion (dBc) VCE = 26 V 6 5 24 V 4 3 2 f = 1.88 GHz ICQ = 40 mA 1 0 0 0.1 0.2 0.3 0.4 0.5 VCE = 26 V f1 = 1.88 f2 = 1.8801 GHz ICQ = 40 mA – 10 – 20 3rd Order – 30 5th – 40 – 50 7th – 60 – 70 0.6 0 2 1 4 3 6 5 Pin, Input Power (Watts) Pout, Output Power (Watts) PEP Figure 2. Typical Output Power versus Input Power Figure 3. IMD versus Output Power T R4 D1 R3 D2 P1 C10 C8 C11 L2 R2 C7 C9 C5 R1 C6 L1 C4 RF Output RF Input C3 C2 C1 C1, C2 C3, C4 C5, C6 C7, C8 C9, C10 C11 D1, D2 1 to 5 pF, Trimmer Capacitor, Johanson 100A, 68 pF, Chip Capacitor, ATC 100A, 82 pF, Chip Capacitor, ATC 15 nF, Chip Capacitor, 0805 330 pF, Chip Capacitor, 0805 4.7 µF, 35 V, Capacitor Diode, 1N4148 L1 L2 P1 R1 R2 R3 R4 T 2 Turns, Wire 0.5 mm, ID 2 mm Ferrite Bead, SMD Fair–Rite 10 kΩ, Trimmer 2.2 Ω, Chip Resistor, 0805 56 Ω, Chip Resistor, 1206 1.2 kΩ, 1/4 W, 5%, Resistor 100 Ω, 3 W, Power Resistor Transistor, BD135 Figure 4. 1.80 – 1.88 GHz Test Circuit Electrical Schematic MOTOROLA RF DEVICE DATA MRF6402 3 T Ä ÄÄ Ä ÄÄÄ ÄÄ ÄÄ C10 C8 R3 P1 D1 C5 L2 C6 C11 R4 L1 D2 Ä Ä R2 C7 C9 Output R1 C3 C4 RF Input C2 C1 Input RF Output Figure 5. Test Circuit Components View and Parts List PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M N M M STYLE 2: PIN 1. 2. 3. 4. 5. 6. J C H E -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) SEATING PLANE CASE 319–07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. 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