KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter Value 40 Units V VCEO Collector-Emitter Voltage VEBO Emitter- Base Voltage 30 V 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 7 A IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 10 W PC Collector Dissipation (Ta=25°C) 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 30V, IE = 0 Min. Typ. IEBO Emitter Cut-off Current VEB = 3V, IC = 0 hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 20mA VCE = 2V, IC = 1A VCE(sat) *Collector-Emitter Saturation Voltage VBE(sat) Max. 1 Units µA 30 60 150 160 1 µA 400 IC = 2A, IB = 0.2A 0.3 0.5 *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 90 MHz Cob Output Capacitance VCB = 10V, IE = 0 f = 1MHz 45 pF V V * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification R O Y G hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics 1000 VCE = 2V IB = 10mA 1.6 IB = 9mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 IB = 8mA IB = 7mA IB = 6mA 1.2 IB = 5mA 0.8 IB = 4mA IB = 3mA 0.4 100 IB = 2mA 0.0 0 IB = 1mA 4 8 12 16 10 1E-3 20 VCE[V], COLLECTOR-EMITTER VOLTAGE V BE(sat) 0.1 VCE(sat) 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB 0.01 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1000 VCE = 5V 100 10 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product 10 1000 0 10 1 ipa t io nL im ite d b S/ m Li d ite 100 IC MAX. (DC) Diss s 1m IC[A], COLLECTOR CURRENT s us m 10 ICMAX. (pulse) IE=0 f=1MHz Cob[pF], CAPACITANCE 1 Figure 2. DC current Gain 10 1E-3 1E-3 0.1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 0.01 0.1 0.01 10 1 10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 100 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSD882 160 16 140 14 PC[W], POWER DISSIPATION dT(%), IC DERATING Typical Characteristics (Continued) 120 100 S/b 80 Di 60 ss 40 ip at ion 20 L im Li m it e d ite d 0 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve Of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSD882 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E