ONSEMI BAT54HT1

BAT54HT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
• Device Marking: JV
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30 VOLT SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
VR
Rating
Reverse Voltage
Value
Unit
30
V
Max
Unit
1
2
THERMAL CHARACTERISTICS
Symbol
PD
RqJA
TJ, Tstg
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
Thermal Resistance Junction to Ambient
635
°C/W
Junction and Storage Temperature
150
°C
PLASTIC
SOD–323
CASE 477
*FR–4 Minimum Pad
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
BAT54HT1
SOD–323
3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
1
Publication Order Number:
BAT54HT1/D
BAT54HT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
—
—
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
—
0.5
2.0
µAdc
Forward Voltage (IF = 0.1 mAdc)
VF
—
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
—
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
—
0.52
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
—
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
—
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
—
0.35
0.40
Vdc
Forward Current (DC)
IF
—
—
200
mAdc
Repetitive Peak Forward Current
IFRM
—
—
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
—
—
600
mAdc
Characteristic
Reverse Breakdown Voltage (IR = 10 µA)
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2
BAT54HT1
820 Ω
+10 V
2k
0.1 µF
tr
IF
100 µH
tp
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
IR , REVERSE CURRENT (µA)
1 50°C
10
1 25°C
1.0
85°C
25°C
0.1
0.0
– 40°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
– 55°C
TA = 25°C
0.001
0.1
0.2
0.3
0.4
0
0.6
0.5
5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
14
C T , TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
25
30
BAT54HT1
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A
K
A
D
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
B
DIM
A
B
C
D
E
H
J
K
E
C
J
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.60
1.80
0.063
0.071
1.15
1.35
0.045
0.053
0.80
1.00
0.031
0.039
0.25
0.40
0.010
0.016
0.15 REF
0.006 REF
0.00
0.10
0.000
0.004
0.089
0.177 0.0035 0.0070
2.30
2.70
0.091
0.106
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
NOTE 3
0.63 mm
0.025ȀȀ
1.60 mm
0.063ȀȀ
2.85 mm
0.112ȀȀ
0.83 mm
0.033ȀȀ
ǒ mm Ǔ
inches
SOD–323
Soldering Footprint
ON Semiconductor and
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BAT54HT1/D