BAT54HT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc • Device Marking: JV http://onsemi.com 30 VOLT SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Symbol VR Rating Reverse Voltage Value Unit 30 V Max Unit 1 2 THERMAL CHARACTERISTICS Symbol PD RqJA TJ, Tstg Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient 635 °C/W Junction and Storage Temperature 150 °C PLASTIC SOD–323 CASE 477 *FR–4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device Package Shipping BAT54HT1 SOD–323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 December, 1999 – Rev. 0 1 Publication Order Number: BAT54HT1/D BAT54HT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc Characteristic Reverse Breakdown Voltage (IR = 10 µA) http://onsemi.com 2 BAT54HT1 820 Ω +10 V 2k 0.1 µF tr IF 100 µH tp 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 IR , REVERSE CURRENT (µA) 1 50°C 10 1 25°C 1.0 85°C 25°C 0.1 0.0 – 40°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 – 55°C TA = 25°C 0.001 0.1 0.2 0.3 0.4 0 0.6 0.5 5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 14 C T , TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 25 30 BAT54HT1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63 mm 0.025ȀȀ 1.60 mm 0.063ȀȀ 2.85 mm 0.112ȀȀ 0.83 mm 0.033ȀȀ ǒ mm Ǔ inches SOD–323 Soldering Footprint ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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