Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 182 BC 183 BC 184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO 60 45 45 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Rating Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 50 30 30 — — — — — — 60 45 45 — — — — — — 6.0 — — — — — 0.2 0.2 0.2 15 15 15 — — 15 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 Emitter – Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) V V(BR)EBO V ICBO BC182 BC183 BC184 Emitter–Base Leakage Current (VEB = 4.0 V, IC = 0) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 IEBO V nA nA 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC182 BC183 BC184 40 40 100 — — — — — — (IC = 2.0 mA, VCE = 5.0 V) BC182 BC183 BC184 120 120 250 — — — 500 800 800 (IC = 100 mA, VCE = 5.0 V) BC182 BC183 BC184 80 80 130 — — — — — — — — 0.07 0.2 0.25 0.6 — — 1.2 — 0.55 — 0.5 0.62 0.83 — 0.7 — BC182 BC183 BC184 — — — 100 120 140 — — — BC182 BC183 BC184 150 150 150 200 240 280 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE Collector – Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) VCE(sat) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) VBE(sat) Base–Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1) VBE(on) — V V V DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cob — — 5.0 pF Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib — 8.0 — pF 125 125 240 125 240 — — — — — 500 900 900 260 500 Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) hfe BC182 BC183 BC184 BC182A BC182B — NF BC184 BC182 BC183 BC184 dB — — — — 2.0 2.0 2.0 2.0 4.0 10 10 4.0 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TA = 25°C VCE = 10 V TA = 25°C 100 80 60 TA = 25°C Cib 5.0 3.0 Cob 2.0 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 1.0 0.4 0.6 0.8 1.0 r b, BASE SPREADING RESISTANCE (OHMS) Figure 3. Current–Gain — Bandwidth Product 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 10 Figure 5. Base Spreading Resistance Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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