Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25 –25 Vdc Collector – Base Voltage VCBO –50 –30 –30 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Rating Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC307 BC308C BC309B V(BR)CEO –45 –25 –25 — — — — — — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) BC307 BC308C BC309B V(BR)EBO –5.0 –5.0 –5.0 — — — — — — Vdc BC307 BC308C BC309B — — — –0.2 –0.2 –0.2 –15 –15 –15 nAdc (VCES = –50 V, VBE = 0) TA = 125°C BC307 — –0.2 –4.0 µA (VCES = –30 V, VBE = 0) TA = 125°C BC308C BC309B — — –0.2 –0.2 –4.0 –4.0 Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) ICES Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max — — 150 270 — — Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE BC307B/309B BC307C/308C — (IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307 BC308C 120 120 — — 800 800 (IC = –100 mAdc, VCE = –5.0 Vdc) BC307B/309B BC307C/308C 200 420 290 500 460 800 BC307B/309B BC307C/308C — — 180 300 — — — — — –0.10 –0.30 –0.25 –0.3 –0.6 — — — –0.7 –1.0 — — –0.55 –0.62 –0.7 — — — 280 320 360 — — — — — 6.0 — — — — 2.0 2.0 2.0 2.0 4.0 10 10 4.0 Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC307 BC308C BC309B Common Base Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) Ccbo MHz NF BC309 BC307 BC308C BC309B pF dB 1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data –1.0 VCE = –10 V TA = 25°C 1.5 –0.9 1.0 0.7 0.5 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 VCE(sat) @ IC/IB = 10 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 2. “Saturation” and “On” Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 –0.2 0.3 0.2 –0.2 VCE = –10 V TA = 25°C 150 100 80 60 5.0 TA = 25°C 3.0 Cob 2.0 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) 1.0 –0.4 –0.6 –50 Figure 3. Current–Gain — Bandwidth Product 0.5 0.3 VCE = –10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 –0.1 –0.2 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –1.0 –2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS) –20 –30 –40 Figure 4. Capacitances r b′, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 –10 Figure 5. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 150 140 130 VCE = –10 V f = 1.0 kHz TA = 25°C 120 110 100 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 Figure 6. Base Spreading Resistance 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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