MOTOROLA BF421

Order this document
by BF421/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
BF421
BF423
Unit
Collector – Emitter Voltage
VCEO
–300
–250
Vdc
Collector – Base Voltage
VCBO
–300
–250
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
–300
–250
—
—
–300
–250
—
—
–5.0
–5.0
—
—
—
—
–0.01
—
—
—
–100
—
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
V(BR)CEO
BF421
BF423
Vdc
V(BR)CBO
BF421
BF423
Vdc
V(BR)EBO
BF421
BF423
Vdc
mAdc
ICBO
BF421
BF423
IEBO
BF421
BF423
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
nAdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
50
50
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –25 mA, VCE = –20 Vdc)
hFE
BF421
BF423
—
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.5
Vdc
Base – Emitter Saturation Voltage
(IC = –20 mA, IB = –2.0 mA)
VBE(sat)
—
–2.0
Vdc
fT
60
—
MHz
Cre
—
2.8
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = –30 Vdc, IE = 0, f = 1.0 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
TJ = +125°C
VCE = –10 Vdc
hFE, DC CURRENT GAIN
100
+25°C
70
–55°C
50
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80
–100
IC, COLLECTOR CURRENT (mA)
100
50
C, CAPACITANCE (pF)
Cib
20
10
5.0
2.0
Ccb
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000
VR, REVERSE VOLTAGE (VOLTS)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
TJ = 25°C
VCE = –20 Vdc
80
60
40
30
20
0
–1.0
Figure 2. Capacitances
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
Figure 3. Current–Gain — Bandwidth Product
–1.0
–500
100 µs
IC, COLLECTOR CURRENT (mA)
1.0 ms
V, VOLTAGE (VOLTS)
–0.8
VBE @ VCE = –10 V
–0.6
–0.4
–0.2
0
–1.0
VCE(sat) @ IC/IB = 10 mA
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0 s
–200
–100
BF423
–50
–20
1.5 WATT THERMAL
LIMITATION @ TC = 25°C
625 mW THERMAL
LIMITATION @ TA = 25°C
–10
–5.0
–3.0
BF421
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
–100
–200 –300
–5.0
–10
–20 –30
–50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region — Safe Operating Area
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4
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*BF421/D*
BF421/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data