MOTOROLA BC636

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by BC636/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
2
3
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Symbol
BC
636
BC
638
BC
640
Unit
Collector – Emitter Voltage
VCEO
–45
–60
–80
Vdc
Collector – Base Voltage
VCBO
–45
–60
–80
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Rating
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
–45
–60
–80
—
—
—
—
—
—
–45
–60
–80
—
—
—
—
—
—
–5.0
—
—
Vdc
—
—
—
—
–100
–10
nAdc
µAdc
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage*
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CEO
BC636
BC638
BC640
Vdc
V(BR)CBO
BC636
BC638
BC640
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
V(BR)EBO
Vdc
ICBO
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
25
40
40
40
25
—
—
—
—
—
—
250
160
160
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
hFE
BC636
BC638
BC640
(IC = –500 mA, VCE = –2.0 V)
—
Collector – Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
—
–0.25
–0.5
–0.5
—
Vdc
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
—
—
–1.0
Vdc
fT
—
150
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
9.0
—
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
110
—
pF
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
500
–1000
–200
VCE = –2 V
SOA = 1S
–B
PD TA 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
–500
–100
–50
PD TC 25°C
–20
–10
–5
–2
–1
–1
200
–A
50
BC636
BC638
BC640
PD TA 25°C
PD TC 25°C
–L
100
20
–2 –3 –4 –5 –7 –10
–20 –30–40 –50 –70 –100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1
–3
–10
–30 –50 –100
IC, COLLECTOR CURRENT (mA)
–300 –500 –1000
Figure 2. DC Current Gain
500
–1
300
–0.8
V, VOLTAGE (VOLTS)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
–5
VCE = –2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –2 V
–0.6
–0.4
–0.2
VCE(sat) @ IC/IB = 10
20
–1
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 3. Current Gain Bandwidth Product
0
–1
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
Figure 4. “Saturation” and “On” Voltages
–0.2
–1.0
VCE = –2 VOLTS
∆T = 0°C to +100°C
–1.6
θV for VBE
–2.2
–1
–3
–5
–10
–30 –50 –100
IC, COLLECTOR CURRENT (mA)
–300 –500 –1000
Figure 5. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC636/D