Order this document by BF420/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit Collector – Emitter Voltage VCEO 300 250 Vdc Collector – Base Voltage VCBO 300 250 Vdc Emitter – Base Voltage 2 VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 1 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 300 250 — — 300 250 — — 5.0 5.0 — — — — 0.01 — — — 100 — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 V(BR)CEO BF420 BF422 Vdc V(BR)CBO BF420 BF422 Vdc V(BR)EBO BF420 BF422 Vdc µAdc ICBO BF420 BF422 IEBO BF420 BF422 nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 50 — — — 0.5 — 2.0 60 — — 1.6 Unit ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) hFE BF420 BF422 Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2 fT MHz Cre pF Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 hFE, DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 25°C 50 –55°C 30 20 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 70 100 C, CAPACITANCE (pF) 50 Ceb 20 10 5.0 Ccb 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 70 50 30 20 10 1.0 Figure 2. Capacitances 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 500 IC, COLLECTOR CURRENT (mA) TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 2.0 Figure 3. Current–Gain — Bandwidth Product 1.4 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 TJ = 25°C VCE = 20 V f = 20 MHz VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 100 10 µs 100 µs TA = 25°C 1.0 ms TC = 25°C 50 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 1.0 CURVES APPLY BELOW RATED VCEO 0.5 0.5 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 200 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Forward Bias Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE Motorola reserves the right to make changes without further notice to any products herein. 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