MOTOROLA BF422

Order this document
by BF420/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BF420
BF422
Unit
Collector – Emitter Voltage
VCEO
300
250
Vdc
Collector – Base Voltage
VCBO
300
250
Vdc
Emitter – Base Voltage
2
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
300
250
—
—
300
250
—
—
5.0
5.0
—
—
—
—
0.01
—
—
—
100
—
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
V(BR)CEO
BF420
BF422
Vdc
V(BR)CBO
BF420
BF422
Vdc
V(BR)EBO
BF420
BF422
Vdc
µAdc
ICBO
BF420
BF422
IEBO
BF420
BF422
nAdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
50
50
—
—
—
0.5
—
2.0
60
—
—
1.6
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
hFE
BF420
BF422
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2
fT
MHz
Cre
pF
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
hFE, DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT (mA)
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
VR, REVERSE VOLTAGE (VOLTS)
100
200
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
70
50
30
20
10
1.0
Figure 2. Capacitances
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
500
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
2.0
Figure 3. Current–Gain — Bandwidth Product
1.4
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
1.0
TJ = 25°C
VCE = 20 V
f = 20 MHz
VCE(sat) @ IC/IB = 10
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
100
10 µs
100 µs
TA = 25°C
1.0 ms
TC = 25°C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
10
20
MPSA43
MPSA42
50
100
200
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Small–Signal Transistors, FETs and Diodes DeviceBF420/D
Data