MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage — 100 Volts 150°C Operating Junction Temperature Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMB CASE 403A PLASTIC Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Markings; MBRS190T3: B19 Markings; MBRS1100T3: B1C MARKING DIAGRAM B1x B1x = Device Code x = 9 or C MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBRS190T3 MBRS1100T3 VRRM VRWM VR Average Rectified Forward Current TL = 120°C TL = 100°C IF(AV) Non–Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature Voltage Rate of Change Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 5 Value Unit V ORDERING INFORMATION 90 100 Device Package Shipping MBRS1100T3 SMB 2500/Tape & Reel MBRS190T3 SMB 2500/Tape & Reel A 1.0 2.0 50 A Preferred devices are recommended choices for future use and best overall value. TJ –65 to +150 °C dv/dt 10 V/ns 1 Publication Order Number: MBRS1100T3/D MBRS1100T3, MBRS190T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit RθJL 22 °C/W Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25°C) VF 0.75 Volts Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Thermal Resistance — Junction to Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS mA 0.5 5.0 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1K 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 20 10 TJ = 150°C 5 2 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ = 150°C I R , REVERSE CURRENT ( µA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 1 1.1 1.2 1.3 125°C 100°C 25°C 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* 3.2 4.0 2.8 3.0 DC 2.5 2.0 SQUARE WAVE 1.6 SQUARE WAVE 2.0 DC 1.2 1.5 1.0 0.8 0.5 0.4 0 RATED VR APPLIED RθJL = 22°C/W TJ = 100°C 3.5 TJ = 100°C 2.4 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) PF(AV), AVERAGE POWER DISSIPATION (WATTS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 20 40 60 80 100 120 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C) Figure 3. Power Dissipation Figure 4. Current Derating, Lead http://onsemi.com 2 140 160 MBRS1100T3, MBRS190T3 C, CAPACITANCE (pF) TYPICAL ELECTRICAL CHARACTERISTICS 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 NOTE: TYPICAL CAPACITANCE NOTE: AT 0 V = 270 pF 0.1 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance INFORMATION FOR USING THE SMB SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.089 2.261 0.108 2.743 0.085 2.159 inches mm MOUNTING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 5 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 3 MBRS1100T3, MBRS190T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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