Order this document by MJF6388/D SEMICONDUCTOR TECHNICAL DATA For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • • • • • • • • • COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS Isolated Overmold Package, TO–220 Type Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107 100 VCEO(sus) 10 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain — 1000 (Min) @ IC = 5.0 Adc High Isolation Voltage (up to 4500 VRMS) Case 221D is UL Recognized at 3500 VRMS: File #E69369 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 221D–02 UL RECOGNIZED MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol Value Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc VISOL 4500 3500 1500 V Collector Current — Continuous — Peak(2) IC 10 15 Adc Base Current IB 1.0 Adc Total Power Dissipation* @ TC = 25_C Derate above 25_C PD 40 0.31 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C TJ, Tstg – 65 to + 150 _C RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Figure 14 Test No. 2 Per Figure 15 Test No. 3 Per Figure 16 Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case* Characteristic RθJC 3.2 _C/W Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Lead Temperature for Soldering Purpose TL 260 _C (1) Proper strike and creepage distance must be provided. (2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 inSlbs. Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO — 10 µAdc Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) ICEX — — 10 3.0 µAdc mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 10 µAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc hFE 3000 1000 200 100 15000 — — — — Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Collector–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) — — — — 2.0 2.0 2.5 3.0 Vdc Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) — — 2.8 4.5 Vdc Base–Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.5 Vdc |hfe| 20 — — Cob — 200 300 pF Cc–hs — 3.0 Typ pF hfe 1000 — — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MJF6388 MJF6668 Insulation Capacitance (Collector–to–External Heatsink) Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. NPN MJF6388 PNP MJF6668 COLLECTOR BASE COLLECTOR BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 1. Darlington Schematic 2 Motorola Bipolar Power Transistor Device Data VCC + 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., MUR110 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE TUT V1 APPROX. +12 V RB V2 APPROX. –8 V ≈ 120 –4 V 25 µs tr, tf ≤ 10 ns DUTY CYCLE = 1% ≈8k D1 51 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure 2. Switching Times Test Circuit NPN MJF6388 PNP MJF6668 10 7 5 7 5 ts tf 1 0.7 0.3 0.2 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 tr 3 t, TIME ( µs) t, TIME ( µs) 3 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td 2 ts 1 0.7 0.5 0.3 0.2 1 0.5 2 IC, COLLECTOR CURRENT (AMPS) 5 0.1 0.1 10 td tf 0.2 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 Figure 3. Typical Switching Times IC, COLLECTOR CURRENT (AMPS) 20 100 µs 10 5 3 2 TJ = 150°C 1 1 ms 5 ms 0.5 0.3 0.2 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 0.1 0.05 0.03 0.02 dc 1 5 20 30 2 3 10 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 4. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.05 0.03 P(pk) RθJC(t) = r(t) RθJC RθJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 0.05 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.05 0.2 0.3 0.5 0.1 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K Figure 5. Thermal Response 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 60 40 80 100 140 120 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = l50_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. TC, CASE TEMPERATURE (°C) Figure 6. Maximum Power Derating NPN MJF6388 PNP MJF6668 5000 3000 2000 5000 hFE , SMALL–SIGNAL CURRENT GAIN 10,000 hfe , SMALL–SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 2000 1000 500 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 200 100 50 20 10 1 2 3 5 7 10 20 30 50 70 100 f, FREQUENCY (kHz) 200 300 500 1000 Figure 7. Typical Small–Signal Current Gain 4 Motorola Bipolar Power Transistor Device Data NPN MJF6388 PNP MJF6668 300 300 TJ = 25°C TJ = 25°C 200 100 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 200 Cob 70 Cib 50 30 0.1 Cib 100 Cob 70 50 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 30 0.1 100 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 8. Typical Capacitance 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 5000 TJ = 150°C 3000 2000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 25°C 1000 – 55°C 500 300 200 0.1 0.2 0.5 0.7 0.3 1 3 2 5 7 7000 5000 2000 25°C 1000 700 500 300 200 0.1 10 TJ = 150°C 3000 – 55°C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 9. Typical DC Current Gain 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 IB, BASE CURRENT (mA) 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) Figure 10. Typical Collector Saturation Region Motorola Bipolar Power Transistor Device Data 5 NPN MJF6388 PNP MJF6668 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4 V 2 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 1 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.5 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages +4 +5 θV, TEMPERATURE COEFFICIENT (mV/ °C) θV, TEMPERATURE COEFFICIENT (mV/ °C) +5 *IC/IB ≤ hFE/3 +3 +2 25°C to 150°C +1 – 55°C to 25°C 0 –1 –2 –3 –4 –5 0.1 *θVC for VCE(sat) 25°C to 150°C θVB for VBE – 55°C to 25°C *IC/IB ≤ hFE/3 +4 +3 25°C to 150°C +2 +1 – 55°C to 25°C 0 –1 *θVC for VCE(sat) –2 –3 θVB for VBE 25°C to 150°C – 55°C to 25°C –4 –5 0.2 0.3 0.5 0.7 1 2 3 5 7 0.1 10 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 Figure 12. Typical Temperature Coefficients 105 105 REVERSE REVERSE FORWARD IC, COLLECTOR CURRENT ( µ A) IC, COLLECTOR CURRENT ( µ A) 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 +1 VBE, BASE–EMITTER VOLTAGE (VOLTS) + 1.2 + 1.4 FORWARD 104 VCE = 30 V 103 102 101 TJ = 150°C 100°C 100 25°C 10–1 + 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 –1 – 1.2 – 1.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut–Off Region 6 Motorola Bipolar Power Transistor Device Data TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE 0.107” MIN LEADS 0.107” MIN LEADS HEATSINK HEATSINK 0.110” MIN Figure 14. Clip Mounting Position for Isolation Test Number 1 Figure 15. Clip Mounting Position for Isolation Test Number 2 Figure 16. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 17. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data 7 PACKAGE DIMENSIONS SEATING PLANE –T– –B– F C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D–02 TO–220 TYPE ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. 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