MOTOROLA Order this document by BUL147/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE BUL147* BUL147F* NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high–voltage/high–speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Parametric Distributions are Tight and Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Symbol Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Operating and Storage Temperature BUL147 BUL147F Unit VCEO VCES 400 Vdc 700 Vdc VEBO IC ICM IB IBM VISOL 9.0 Vdc 8.0 16 Adc 4.0 8.0 Adc PD TJ, Tstg — — — 4500 3500 1500 Volts 125 1.0 45 0.36 Watts W/°C – 65 to 150 BUL147 CASE 221A–06 TO–220AB °C THERMAL CHARACTERISTICS Symbol BUL44 BUL44F Unit Thermal Resistance — Junction to Case — Junction to Ambient Rating RθJC RθJA 1.0 62.5 2.78 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 BUL147F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) ICEO 400 — — Vdc — — 100 µAdc ICES — — — — — — 100 500 100 µAdc IEBO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. (continued) Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3–1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) VBE(sat) — — 0.82 0.92 1.1 1.25 Vdc Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) VCE(sat) — — — — 0.25 0.3 0.35 0.35 0.5 0.5 0.7 0.8 hFE 14 — 8.0 7.0 10 10 — 30 12 11 18 20 34 — — — — — — — 14 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cob — 100 175 pF Input Capacitance (VEB = 8.0 V) Cib — 1750 2500 pF (TC = 125°C) — — 3.0 5.5 — — (TC = 125°C) — — 0.8 1.4 — — (TC = 125°C) — — 3.3 8.5 — — (TC = 125°C) — — 0.4 1.0 — — ton — — 200 190 350 — ns toff — — 1.0 1.6 2.5 — µs ton — — 85 100 150 — ns toff — — 1.5 2.0 2.5 — µs tfi — — 100 120 180 — ns tsi — — 1.3 1.9 2.5 — µs tc — — 210 230 350 — ns tfi — — 80 100 150 — ns tsi — — 1.6 2.1 3.2 — µs tc — — 170 200 300 — ns tfi 60 — — 150 180 — ns tsi 2.6 — — 4.3 3.8 — µs tc — — 200 330 350 — ns ON CHARACTERISTICS (TC = 125°C) (IC = 4.5 Adc, IB = 0.9 Adc) (TC = 125°C) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 0.9 Adc VCC = 300 V) 1.0 µs 3.0 µs 1.0 µs 3.0 µs VCE(dsat) Volts SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) Turn–On Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB1 = 2.25 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 2.25 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 0.9 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) 3–2 Motorola Bipolar Power Transistor Device Data TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V TJ = 25°C 10 TJ = – 20°C 1 0.01 1 0.1 VCE = 5 V TJ = 125°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = – 20°C 10 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 1.5 1 IC = 1 A 3A 5A 8A V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 10 A 0.5 1 IC/IB = 10 0.1 IC/IB = 5 0 0.01 0.1 1 IB, BASE CURRENT (AMPS) 0.01 0.01 10 Figure 3. Collector Saturation Region Cib 1.1 TJ = 25°C f = 1 MHz 1000 1 C, CAPACITANCE (pF) V BE , VOLTAGE (VOLTS) 10 10000 1.2 0.9 0.8 TJ = 25°C 0.6 Cob 100 10 IC/IB = 5 IC/IB = 10 0.5 TJ = 125°C 0.4 0.01 0.1 1 IC COLLECTOR CURRENT (AMPS) Figure 4. Collector–Emitter Saturation Voltage 1.3 0.7 TJ = 25°C TJ = 125°C 0.1 1 10 1 1 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 100 10 IC, COLLECTOR CURRENT (AMPS) 3–3 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 600 4000 IB(off) = IC/2 VCC = 300 V PW = 20 µs 500 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 25°C TJ = 125°C 3500 3000 I /I = 5 C B TJ = 125°C t, TIME (ns) t, TIME (ns) 400 IC/IB = 5 IC/IB = 10 TJ = 25°C 300 200 2500 2000 1500 1000 100 0 0 0 1 3 2 4 6 5 7 8 1 5 4 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 8 4000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 2000 1500 1000 500 TJ = 25°C TJ = 125°C 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 3000 2500 IC = 2 A 2000 1500 1000 500 IC/IB = 10 3 4 6 5 IC COLLECTOR CURRENT (AMPS) 2 TJ = 25°C TJ = 125°C 3500 t si , STORAGE TIME (ns) IC/IB = 5 2500 7 0 8 IC = 4.5 A 3 Figure 9. Inductive Storage Time, tsi 4 5 7 6 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 10. Inductive Storage Time, tsi(hFE) 250 300 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C tc 250 200 tc 200 tfi t, TIME (ns) t, TIME (ns) 7 6 IC, COLLECTOR CURRENT (AMPS) 3000 t, TIME (ns) 3 2 IC, COLLECTOR CURRENT (AMPS) 3500 0 IC/IB = 10 500 150 150 100 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 0 1 3–4 2 50 TJ = 25°C TJ = 125°C 3 4 5 6 7 0 tfi 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 Motorola Bipolar Power Transistor Device Data 8 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 180 300 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 160 t fi , FALL TIME (ns) IC = 2 A 140 IC = 2 A TC , CROSSOVER TIME (ns) TJ = 25°C TJ = 125°C 120 100 80 IC = 4.5 A 60 3 4 5 250 200 150 IC = 4.5 A 100 TJ = 25°C TJ = 125°C 50 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 3 15 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH Figure 13. Inductive Fall Time 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 9 100 5 ms 10 µs 1 ms 1 µs 10 EXTENDED SOA 1 DC (BUL147F) 0.1 100 1000 7 6 5 4 3 –5V 2 1 VBE(off) = 0 V Figure 15. Forward Bias Safe Operating Area SECOND BREAKDOWN DERATING 0.6 0.4 THERMAL DERATING 0.2 40 80 60 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 100 200 300 400 –1, 5 V 500 600 700 800 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) POWER DERATING FACTOR TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 8 0 0.01 10 0.0 20 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (BUL147) 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 3–5 10 5 4 VCE dyn 1 µs 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 µs 1 6 0 5 tc VCLAMP 10% VCLAMP IB 90% IB1 10% IC 4 –1 90% IB –2 3 1 µs –3 –4 2 3 µs IB –5 0 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 µF 150 Ω 3W 100 Ω 3W IC PEAK 100 µF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 Ω RB2 MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA –Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit 3–6 Motorola Bipolar Power Transistor Device Data TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 10 100 1000 t, TIME (ms) Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 RθJC(t) = r(t) RθJC RθJC = 2.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) SINGLE PULSE 0.1 1 10 100 1000 10000 100000 t, TIME (ms) Figure 21. Typical Thermal Response (ZθJC(t)) for BUL147F Motorola Bipolar Power Transistor Device Data 3–7 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 3–8 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L STYLE 1: PIN 1. 2. 3. 4. R V J BASE COLLECTOR EMITTER COLLECTOR G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BUL44 CASE 221A–06 TO–220AB ISSUE Y –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U A 1 2 3 H STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER –Y– K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 Y BUL44F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D Motorola Bipolar Power Transistor Device Data 3–9 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 3–10 ◊ Motorola Bipolar Power Transistor Device Data *BUL147/D* BUL147/D