VISHAY SIA920DJ

New Product
SiA920DJ
Vishay Siliconix
Dual N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
8
RDS(on) ()
ID (A)a
0.027 at VGS = 4.5 V
4.5
0.031 at VGS = 2.5 V
4.5
0.036 at Vgs = 1.8 V
4.5
0.047 at Vgs = 1.5 V
4.5
0.110 at Vgs = 1.2 V
1.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.8 nC
PowerPAK SC-70-6 Dual
APPLICATIONS
1
• Load Switch with Low Voltage Drop
• Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
• Smart Phones, Tablet PCs, Portable Media Players
S1
2
G1
3
D2
D1
D1
6
D2
D1
G2
5
2.05 mm
4
D2
2.05 mm
S2
G1
Ordering Information: SiA920DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
G2
N-Channel MOSFET
S1
N-Channel MOSFET
S2
CHX
Part # code
XXX
Lot Traceability
and Date code
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Continuous Source-Drain Diode Current
ID
IDM
IS
PD
TJ, Tstg
Limit
8
±5
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t5s
RthJA
52
65
Maximum Junction-to-Ambientb, f
°C/W
RthJC
12.5
16
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
a
Forward Transconductance
RDS(on)
gfs
V
11
mV/°C
- 2.3
0.35
0.7
V
± 100
nA
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS  5 V, VGS = 4.5 V
10
µA
A
VGS 4.5 V, ID = 5.3 A
0.022
0.027
VGS 2.5 V, ID = 4.9 A
0.025
0.031
VGS 1.8 V, ID = 4.6 A
0.029
0.036
VGS 1.5 V, ID = 1.5 A
0.035
0.047
VGS 1.2 V, ID = 0.5 A
0.050
0.110
VDS = 10 V, ID = 5.3 A
28
VDS = 4 V, VGS = 0 V, f = 1 MHz
175

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
85
Total Gate Charge
Qg
4.8
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
470
VDS = 4 V, VGS = 4.5 V, ID = 6.9 A
tr
tf
7.5
0.63
nC
0.6
f = 1 MHz
td(on)
td(off)
pF
VDD = 10 V, RL = 1.9 
ID  5.5 A, VGEN = 4.5 V, Rg = 1 
0.8
4
8
5
10
12
25
20
40
7
15

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
4.5
20
IS = 5.5 A, VGS 0 V
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
30
ns
5
10
nC
7.8
7.2
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
VGS = 5 V thru 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 1.5 V
12
8
4
6
TC = 25 °C
4
TC = 125 °C
2
VGS = 1 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
2.0
0.0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
1.5
Transfer Characteristics
800
0.10
VGS = 1.2 V
VGS = 1.5 V
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.08
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
Ciss
400
Coss
200
0.02
VGS = 4.5 V
Crss
0.00
0
0
4
8
12
ID - Drain Current (A)
16
20
0
2
4
6
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.5
ID = 6.9 A
RDS(on) - On-Resistance (Normalized)
5
VGS - Gate-to-Source Voltage (V)
8
VDS = 3 V
4
3
VDS = 6 V
VDS = 9.6 V
2
1
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
5
6
1.4
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5.3 A
1.3
VGS = 1.5 V; ID = 1.5 A
1.2
1.1
VGS = 1.2 V; ID = 0.5 A
1.0
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.08
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 5.3 A
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
20
0.8
0.7
15
0.5
Power (W)
VGS(th) (V)
0.6
ID = 250 μA
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
Threshold Voltage
0.01
0.1
1
Pulse (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
0.1
TA = 25 °C
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
15
Power Dissipation (W)
ID - Drain Current (A)
12
9
6
6
4
2
Package Limited
3
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63299.
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Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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