SiA416DJ Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.083 at VGS = 10 V 11.3 0.130 at VGS = 4.5 V 9 Qg (Typ.) 3.5 nC PowerPAK SC-70-6L-Single • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Converters • Full-Bridge Converters • For Power Bricks and POL Power 1 D 2 D D 3 6 G D 5 S D 2.05 mm Marking Code S ARX Part # code 2.05 mm 4 G XXX Lot Traceability and Date code Bottom View Ordering Information: SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 9 ID 4.8b, c 3.9b, c 15 IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current TC = 25 °C TA = 25 °C L =0.1 mH Single Pulse Avalanche Energy TC = 70 °C TA = 25 °C IAS 2.9b, c 3 EAS 0.45 mJ 19 12 PD TA = 70 °C Operating Junction and Storage Temperature Range A 12 IS TC = 25 °C Maximum Power Dissipation V 11.3 TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit TJ, Tstg 3.5b, c 2.2b, c - 55 to 150 Soldering Recommendations (Peak Temperature)d, e 260 W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 5.3 6.5 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA416DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs V 54 mV/°C - 4.4 1.6 3 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 10 µA A VGS = 10 V, ID = 3.2 A 0.068 0.083 VGS = 4.5 V, ID = 2.6 A 0.092 0.130 VDS = 10 V, ID = 3.2 A 8 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Gate Resistance 295 VDS = 50 V, VGS = 0 V, f = 1 MHz 92 VDS = 50 V, VGS = 10 V, ID = 4.8 A 6.5 10 3.5 5.3 16 VDS = 50 V, VGS = 4.5 V, ID = 4.8 A 1.2 Qoss VDS = 50 V, VGS = 0 V 7.6 Rg f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 3.6 5 10 13 25 10 20 10 20 25 50 100 200 VDD = 50 V, RL = 12.8 ID 3.9 A, VGEN = 4.5 V, Rg = 1 tf Fall Time 1.8 tf td(off) Turn-Off Delay Time VDD = 50 V, RL = 12.8 ID 3.9 A, VGEN = 10 V, Rg = 1 0.4 td(on) tr Rise Time nC 1.9 td(on) Turn-On Delay Time pF 15 30 25 50 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 15 IS = 3.9 A IF = 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 30 60 ns 30 60 nC 20 10 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA416DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 20 VGS = 10 V thru 6 V VGS = 5 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 VGS = 4 V 6 4 TC = 25 °C TC = 125 °C 2 4 TC = - 55 °C VGS = 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.20 500 0.16 400 0.12 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 4.5 V VGS = 10 V 0.08 5 Ciss 300 Coss 200 100 0.04 Crss 0 0 0 3 6 9 ID - Drain Current (A) 12 0 15 5 10 On-Resistance vs. Drain Current and Gate Voltage 20 25 30 Capacitance 1.8 10 ID = 3.2 A 8 RDS(on) - On-Resistance (Normalized) ID = 4.8 A VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) VDS = 50 V 6 VDS = 25 V VDS = 75 V 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 8 VGS = 10 V 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA416DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.40 ID = 3.2 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.32 10 TJ = 150 °C TJ = 25 °C 1 0.24 0.16 TJ = 125 °C 0.08 TJ = 25 °C 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 30 2.7 25 2.5 Power (W) VGS(th) (V) 20 2.3 2.1 ID = 250 μA 10 1.9 1.7 - 50 15 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 TA = 25 °C 0.01 BVDSS Limited 0.1 100 ms 1s 10 s DC 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA416DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 ID - Drain Current (A) 12 Package Limited 9 6 3 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 Current Derating* Power Dissipation (W) 20 15 10 5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA416DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63649. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 63649 S12-1765-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000