New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Ultra-Thin 0.6 mm height - Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 24.5 nC APPLICATIONS • Load Switch and Charger Switch for Portable Devices • DC/DC Converter Thin PowerPAK SC-70-6L-Single S 1 D 6 G D D 5 2.05 mm Marking Code 2 G D BPX 3 Part # code 0.6 mm XXX S 4 S Lot traceability and Date code 2.05 mm D Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 12a ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 ±8 IS PD TJ, Tstg - 12a - 10.6b, c - 8.5b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA429DJT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V - 12 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance VDS - 5 V, VGS = - 4.5 V RDS(on) gfs 2.7 - 0.4 - 20 µA A VGS = - 4.5 V, ID = - 6 A 0.0170 0.0205 VGS = - 2.5 V, ID = - 2 A 0.022 0.027 VGS = - 1.8 V, ID = - 2 A 0.029 0.036 VGS = - 1.5 V, ID = - 1 A 0.038 0.060 VDS = - 10 V, ID = - 6 A 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1750 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 270 240 VDS = - 10 V, VGS = - 8 V, ID = - 10 A VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A 41 62 24.5 37 2.4 nC 6.7 f = 1 MHz td(on) tr VDD = - 10 V, RL = 1.2 ID - 8.5 A, VGEN = - 4.5 V, Rg = 1 td(off) 1.3 6.3 13 22 35 25 40 70 105 tf 25 40 td(on) 10 15 tr VDD = - 10 V, RL = 1.2 ID - 8.5 A, VGEN = - 8 V, Rg = 1 td(off) tf 10 15 80 120 25 40 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 12 - 30 IS = - 8.5 A, VGS = 0 V IF = - 8.5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 35 60 ns 18 30 nC 13 22 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 30 V GS = 5 V thru 2 V 16 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 V GS = 1.5 V 10 12 8 T C = 25 °C 4 5 T C = 125 °C T C = - 55 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 3500 0.08 V GS = 1.5 V 3000 V GS = 1.8 V 0.06 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.07 0.05 0.04 0.03 V GS = 2.5 V 0.02 2000 Ciss 1500 1000 Coss V GS = 4.5 V 0.01 2500 500 Crss 0 0 0 5 10 15 20 25 0 30 5 ID - Drain Current (A) 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.65 8 ID = 10 A V DS = 5 V 1.45 V DS = 10 V V DS = 16 V 4 2 V GS = 4.5 V; 2.5 V; I D = 6 A (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.25 V GS = 1.8 V; I D = 6 A 1.05 V GS = 1.5 V; I D = 1 A 0.85 0 0 10 20 30 40 50 0.65 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.06 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 T J = 150 °C 10 T J = 25 °C 1 0.05 ID = 1 A; T J = 125 °C 0.04 ID = 6 A; T J = 125 °C 0.03 ID = 6 A; T J = 25 °C 0.02 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 30 0.7 25 0.6 20 ID = 250 μA Power (W) VGS(th) (V) 1 Soure-Drain Diode Forward Voltage 0.8 0.5 15 0.4 10 0.3 5 0.2 - 50 ID = 1 A; T J = 25 °C - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on) * ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 20 Power Dissipation (W) ID - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA429DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67038. www.vishay.com 6 Document Number: 67038 S11-0649-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix CASE OUTLINE for PowerPAK® SC70T D A Terminal #1 b e b Pin 1 T Pin 1 D3 D2 D2 E2 E2 E2 K E3 K4 E4 Pin 2 D2 C A1 K K Topside View e Pin 3 L Pin 2 L E Pin 3 A Pin 4 Pin 5 Pin 6 K3 K2 K1 Z MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.175 0.275 0.375 MIN. 0.525 0.00 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L T ECN: C09-0671-Rev. A, 07-Sep-09 DWG: 5994 MIN. 0.0206 0.00 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 0.007 Backside View of Dual Backside View of Single SINGLE PAD DIM. K2 K1 Detail Z Z Side View Pin 4 Pin 5 Pin 6 K2 DUAL PAD INCHES NOM. 0.024 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.011 MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0.00 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0.00 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Document Number: 65370 07-Sep-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1