Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. SYMBOL PARAMETER PINNING - TO220AB PIN CONFIGURATION PIN DESCRIPTION 1 gate 2 collector 3 emitter tab V(CL)CER VCEsat IC Ptot ECERS MIN. TYP. MAX. UNIT Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation 370 410 500 2.2 20 100 300 V V A W mJ SYMBOL c tab g collector 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VCE Collecter-emitter voltage tp ≤ 500 µs VCE ±VGE IC IC ICM Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Continuous Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C; tp ≤ 10 ms; VCE ≤ 15 V 1 kΩ ≤ RG ≤ 10 kΩ ICLM ECERS ECERR1 EECR1 Ptot Tstg Tj Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature Tmb = 25 ˚C; IC = 10 A; RG = 1 kΩ; see Figs. 23,24 Tmb = 100 ˚C; IC = 8 A; RG = 1 kΩ; f = 50 Hz IE = 1 A; f = 50 Hz Tmb = 25 ˚C - MIN. MAX. UNIT - 500 V -20 - 50 12 10 20 25 V V A A A - 10 A - 300 mJ - 125 mJ - 5 mJ -55 -40 125 150 150 W ˚C ˚C MIN. MAX. UNIT - 2 kV ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (100 pF, 1.5 kΩ) 1 This applies to short-term operation in ignition circuits with open-secondary ignition coil. November 1998 1 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Rth j-a Junction to mounting base Junction to ambient In free air TYP. MAX. UNIT 60 1.0 - K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CG Collector-gate zener breakdown voltage Reverse collector-emitter breakdown voltage Gate-emitter breakdown voltage Gate threshold voltage Gate threshold voltage 2 mA ≤ -IG ≤ 5 mA; -40 ≤ Tj ≤150˚C 370 410 500 V IE = 10 mA 20 30 50 V IG = ± 1 mA 12 16 20 V VCE = VGE; IC = 1 mA VCE = VGE; IC = 1 mA; -40 ≤ Tj ≤150˚C VCE = 50 V; VGE = 0 V; Tj = 25 ˚C 1 0.6 1.5 - 2 2.4 V V - 0.01 10 µA Tj = 125 ˚C - 0.01 1 mA VCE = -20 V VCE = -20 V; Tj = 125˚C VGE = ±6 V Tj = 150˚C VGE = 4.5 V; IC = 8 A VGE = 3.5 V; IC = 6 A; -40 ≤ Tj ≤150˚C - 0.2 2 0.1 5 1.2 1.2 5 20 1 100 2.2 2.2 mA mA µA µA V V MIN. TYP. MAX. UNIT V(BR)EC ±V(BR)GES VGE(TO) VGE(TO) ICES ICES IEC IEC IGES VCEsat Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Reverse collector current Gate emitter leakage current Collector-emitter on-state voltage DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER V(CL)CER Collector-emitter clamp voltage RG = 1 kΩ; IC = 10 A; (peak value) -40 ≤ Tj ≤150˚C; Inductive load; see Figs. 23,24 370 410 500 V gfe Forward transconductance VCE = 15 V; IC = 4 A 5.5 15 20 S Cies Coes Cres Input capacitance Output capacitance Feedback capacitance VGE = 0 V; VCE = 25 V; f = 1 MHz 850 - 940 95 30 1200 130 50 pF pF pF td off tf tc Eoff Turn-off delay time Fall time Crossover Time Turn-off Energy loss IC = 8 A; VCL = 300 V; RG = 1 kΩ; VGE = 5 V; Tj = 125˚C; Inductive load; see Figs. 20,21 - 13 6 12 13 18 10 - µs µs µs mJ November 1998 CONDITIONS 2 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ Zth(j-mb) / (K/W) 1E+01 120 Normalised Power Derating PD% 110 100 90 D= 1E+00 1E-01 0.5 80 0.2 70 0.1 60 50 0.05 0.02 40 t P D 1E-02 p t D= p T 30 t 20 10 0 T 0 1E-03 1E-07 1E-05 1E-03 t/s 1E-01 0 1E+01 40 60 80 100 Tmb / C 120 140 Fig.4. Normalised power dissipation. PD% = 100.PD/PD 25˚C = f(Tmb) Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T IC / A 20 BUK8Y6-400IZ 15 ICLM / A BUK8Y6-400IZ I CLM 10 10 Self-clamped 1 5 0.1 0 200 400 0 600 0 50 100 150 dVCE/dt (V/us) VCE / V Fig.5. Derating of ICLM with turn-off dVCE/dt conditions: VCE ≤ 500 V; Tj ≤ Tjmax. Fig.2. Turn-off Safe Operating Area conditions: Tj ≤ Tjmax. ; RG ≥ 1 kΩ 3 VCE / V Tj / C = 200 PMG35A 2 VCE / V 150 25 -40 Tj / C = PMG35A 150 25 -40 1.5 2 1 1 0.5 0 0 0 4 8 12 16 IC / A 20 0 24 Fig.3. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE = 3.5 V November 1998 4 8 12 16 IC / A 20 24 Fig.6. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE = 5 V 3 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT 30 BUK856-400 IZ PMG35A IC / A 5 4 1E-2 VGE / V = 4 +/- IGES / A PMG35A 1E-3 3 IE-4 20 2.8 10 1E-5 2.6 1E-6 2.4 1E-7 2.2 1E-8 2 0 1E-9 0 2 4 6 8 0 10 10 VGE / V 5 VCE / V Fig.10. Typical gate-emitter charcteristics IGES = f(VGE); conditions: VCE = 0 V; Tj = 25˚C Fig.7. Typical Output Characteristics IC = f(VCE); parameter VGE; conditions: Tj = 25˚C 30 IC / A Tj / C = 20 15 PMG35A 10 150 25 -40 ICES / mA PMG35A 150 Tj / C = 25 -40 20 1 10 0 0 1 2 VGE / V 3 0.1 350 4 Fig.8. Typical Transfer Characteristics IC = f(VGE), parameter Tj; conditions: VCE = 10 V 35 gfe / S 370 390 410 VCE / V 430 450 Fig.11. Typical collector clamp characteristics ICES = f(VCE); parameter Tj; conditions: VGE = 0 V PMG35A 2.5 BUK856-400IZ VGE(TO) / V 30 max. 2 25 20 1.5 typ. 1 min. 15 10 5 Tj / C = 0 0 10 150 25 -40 20 0.5 30 -40 -20 IC / A Fig.9. Typical Forward Transconductance gfe = f(IC); parameter Tj; conditions: VCE = 10 V November 1998 0 20 40 60 Tj / C 80 100 120 140 Fig.12. Gate Threshold Voltage VGE(TO) = f(Tj); conditions: IC = 1 mA; VCE = VGE 4 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT SUB-THRESHOLD CONDUCTION IC / A 1E-01 BUK856-400 IZ t / us, E / mJ 100 PMG35A 1E-02 td(off) E(off) 2% 1E-03 98 % typ 10 1E-04 tf 1E-05 1 1E-06 0 0.4 0.8 1.2 VGE / V 1.6 2 0 2.4 VGE / V 4 5 Fig.16. Typical Switching Characteristics vs. RG conditions: Tj=125 ˚C; IC=8 A; VCL=300 V; LC=5 mH. Fig.13. Sub-threshold collector current IC = f(VGE); Tj = 25˚C; VCE = VGE 6 2 3 Rg / kOhm 1 PMG35A t / us, E / mJ PMG35A 15 5 Vcc / V = 12 td(off) 4 10 300 E(off) 3 2 5 tf 1 0 0 0 10 20 Qg / nC 0 30 Fig.17. Typical Switching Characteristics vs. Tj conditions: IC=8 A; VCL=300 V; RG=1 kΩ; LC=5 mH. t / us, E / mJ pmg35a C / pf 150 Tj / C Fig.14. Typical Turn-on Gate Charge Characteristics VGE = f(QG); conditions: IC = 8 A. 10000 100 50 PMG35A 15 td(off) 1000 Cies 10 tf 100 5 Coes Cres 10 0.01 0.1 1 10 VCE / V 100 0 2 4 6 8 10 IC / A Fig.15. Typical Capacitances Cies, Coes, Cres C = f(VCE); conditions: VGE = 0 V; f = 1 MHz November 1998 E(off) 0 1000 Fig.18. Typical Switching Characteristics vs. IC conditions: Tj=125 ˚C VCL=300 V; RG=1 kΩ; LC=5 mH. 5 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT 150 dVce/dt (V/us) BUK856-400 IZ PMG35A 35 V(BR)ECS / V BUK856-400IZ typ. 100 30 50 25 min. 0 0 1 2 3 Rg / kOhm 4 20 -50 5 Fig.19. Typical Turn-off dVCE/dt vs. RG conditions: Tj=125 ˚C; IC=8 A; VCL=300 V; LC=5 mH. 0 50 Tj / degC 100 150 Fig.22. Reverse Breakdown Voltage V(BR)ECS = f(Tj); conditions: IEC = 50 mA Vcc Vcc Lc Lc t p : adjust for correct Ic t p : adjust for correct Ic V CL D.U.T. D.U.T. RG RG VGE VGE IC measure IC measure 0V 0V 0R1 0R1 Fig.20. Test circuit for inductive load switching times. I Fig.23. Test circuit for clamped turn-off energy test I C Ic 90% tf td(off) V Vce t V(cl)cer 10% t 90% Vge VCE VGE t tc P Vce x Ic Ecer 10% t t Fig.21. Definitions of inductive load switching times. November 1998 Fig.24. Definition of clamping energy ECER 6 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.25. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". November 1998 7 Rev. 1.400 Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1998 8 Rev. 1.400