Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. PINNING - SOT223 PIN SYMBOL PARAMETER MAX. UNIT VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V 100 1.7 1.8 150 0.31 V A W ˚C Ω PIN CONFIGURATION DESCRIPTION 1 gate 2 drain 3 source 4 drain (tab) SYMBOL d 4 g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C - - 55 - 100 100 15 1.7 1.1 6.8 1.8 150 150 V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-b Rth j-amb PARAMETER CONDITIONS 1 From junction to board From junction to ambient Mounted on any PCB Mounted on PCB of Fig.17 MIN. TYP. MAX. UNIT - 40 - 70 K/W K/W 1 Temperature measured 1-3 mm from tab. January 1998 1 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-100A STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 100 - - V VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; VDS = 100 V; VGS = 0 V; Tj = 125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 1.7 A 1.0 - 1.5 1 0.1 10 0.23 2.0 10 1.0 100 0.31 V µA mA nA Ω MIN. TYP. MAX. UNIT VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 1.7 A 2 3 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 400 90 35 600 120 50 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω - 12 45 50 30 18 70 70 45 ns ns ns ns MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 1.7 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 1.7 A; VGS = 0 V - 0.85 6.8 1.1 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 1.7 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V - 90 0.30 - ns µC MIN. TYP. MAX. UNIT - - 45 mJ AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 1.7 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tamb = 25 ˚C January 1998 2 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET Normalised Power Derating PD% 10 ID / A BUK582-100A tp = 10 us 100 us VD S/ ID 120 BUK582-100A 110 R D S( O N )= 100 90 80 1 1 ms 70 10 ms 60 50 100 ms DC 40 0.1 30 1s 20 10 s 10 0.01 0.1 0 0 20 40 60 80 Tamb / C 100 120 140 Normalised Current Derating ID% 10 VDS / V 100 Fig.4. Safe operating area Tamb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tamb) 120 1 ID / A 10 5 7 110 6 100 90 BUK582-100A 4 3.5 5 80 70 4 3 60 3 50 40 2 30 20 VGS/ V = 2.5 1 10 2 0 0 20 40 60 80 Tamb / C 100 120 0 140 0 1E+01 1E+00 4 6 8 10 VDS / V Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tamb); conditions: VGS ≥ 5 V 1E+02 2 BUKX82-100 Zth j-amb / (K/W) 1 D= 0.5 RDS(ON)/ Ohm 2.5 0.9 BUK582-100A 3 VGS/ V = 3.5 0.8 0.2 0.1 0.05 0.7 0.6 0.02 0.5 PD tp D= tp 4 0.4 T 0.3 1E-01 5 0.2 0 1E-02 1E-07 t T 0.1 0 1E-05 1E-03 1E-01 1E+01 0 1E+03 2 4 6 ID / A t/s Fig.3. Transient thermal impedance. Zth j-amb = f(t); parameter D = tp/T January 1998 10 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 3 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET 7 BUK582-100A VGS(TO) / V BUK582-100A ID/ A max. 6 2 5 typ. 4 min. 3 1 2 Tj/ C = 150 1 25 0 0 0 1 2 VGS/ V 3 -60 4 gfs / S -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 6 -40 BUK582-100A 5 SUB-THRESHOLD CONDUCTION ID / A 1E-01 1E-02 4 2% 1E-03 98 % typ 3 1E-04 2 1E-05 1 1E-06 0 0 1 3 2 4 5 6 7 0 0.4 0.8 1.2 VGS / V ID/ A Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2.0 2 2.4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 1.6 10000 C / pF BUK5y2-100 1.5 1000 Ciss 1.0 100 Coss 0.5 Crss 0 -60 -40 -20 0 20 40 60 Tj / C 80 10 100 120 140 0 40 VDS / V Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.7 A; VGS = 5 V January 1998 20 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 4 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET 12 BUK582-100A BUK582-100A VGS / V 120 11 110 10 9 8 100 90 80 7 6 70 60 50 VDS/ V = 20 5 80 4 3 2 40 30 20 1 10 0 5 0 20 40 QG / nC Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 1.7 A; parameter VDS 7 IF/ A Normalised Avalanche Energy 0 15 10 WDSS% 60 80 100 Tamb/ C 120 140 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tamb); conditions: ID = 1.7 A BUK582-100A VDD + 6 L 5 VDS - 4 VGS -ID/100 3 Tj/ C = 150 25 T.U.T. 0 2 RGS 1 R 01 shunt 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSDS/ V 2 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj January 1998 5 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-100A PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.17. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). January 1998 6 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-100A MECHANICAL DATA Dimensions in mm 6.7 6.3 Net Mass: 0.11 g B 3.1 2.9 0.32 0.24 0.2 4 A A 0.10 0.02 16 max M 7.3 6.7 3.7 3.3 13 2 1 10 max 1.8 max 1.05 0.80 2.3 0.60 0.85 4.6 3 0.1 M B (4x) Fig.18. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". January 1998 7 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-100A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 8 Rev 1.100