P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Automotive Transient Voltage Suppressors * Features d e nt e t Pa DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) Breakdown Voltage 6.8 to 43V Peak Pulse Power 400W • Plastic package has underwriters laboratory flammability classification 94V-0 • Designed for under the hood applications • Exclusive patented PAR® oxide-passivated chip construction • 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% • Excellent clamping capability • Low incremental surge resistance • Very fast response time • For devices with V(BR) ≥ 10V, ID are typically less than 1.0µA at TA = 150°C • High temperature soldering guaranteed: 300°C/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension Mechanical Data 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Available in uni-directional only Dimensions in inches and (millimeters) *Patent #’s 4,980,315 5,166,769 5,278,094 Case: JEDEC DO-204AL molded plastic body over passivated junction Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.012 oz., 0.3 g Packaging codes/options: 1/5K per Bulk Box, 50K/box 4/5.5K per 13" Reel (52mm Tape), 22K/box 23/3K per Ammo Box (52mm Tape), 27K/box Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Value Unit Peak pulse power dissipation with a 10/1000µs waveform(1) (Fig. 1) PPPM Minimum 400 W Peak pulse current with a 10/1000µs waveform(1) (Fig.3) IPPM See Next Table A PM(AV) 1.0 W IFSM 40 A VF 3.5 V TJ, TSTG –65 to +185 °C Steady state power dissipation at TL = 75°C lead lengths 0.375" (9.5mm)(2) Peak forward surge current, 8.3ms single half sine-wave (3) Maximum instantaneous forward voltage at 25A Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2 (2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5 Document Number 88364 03-May-02 www.vishay.com 1 P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T A Breakdown Voltage V(BR)(1) at IT (V) = 25°C unless otherwise noted) Device Type Min Max Test Current IT (mA) P4KA6.8 P4KA6.8A P4KA7.5 P4KA7.5A P4KA8.2 P4KA8.2A P4KA9.1 P4KA9.1A P4KA10 P4KA10A P4KA11 P4KA11A P4KA12 P4KA12A P4KA13 P4KA13A P4KA15 P4KA15A P4KA16 P4KA16A P4KA18 P4KA18A P4KA20 P4KA20A P4KA22 P4KA22A P4KA24 P4KA24A P4KA27 P4KA27A P4KA30 P4KA30A P4KA33 P4KA33A P4KA36 P4KA36A P4KA39 P4KA39A P4KA43 P4KA43A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.3 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID (µA) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.0 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 300 300 150 150 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TJ = 150°C Maximum Maximum Peak Pulse Reverse Surge Leakage Current at VWM IPPM(2) ID (µA) (A) 1000 1000 500 500 200 200 50 50 20 20 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 Maximum Clamping Voltage at lPPM VC (V) Maximum Temp. Coefficient of V(BR) (% / °C) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.2 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 0.057 0.057 0.060 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 Notes: (1) V(BR) measured after IT applied for 300µs, IT = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88364 03-May-02 P4KA6.8 thru P4KA43A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Pulse Derating Curve Fig. 1 – Peak Pulse Power Rating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM — Peak Pulse Power (kW) 100 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25°C 10 1 100 75 50 25 0 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms 25 0 td — Pulse Width (sec.) TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10µsec. 150 175 200 Peak Value IPPM 100 Half Value — IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A. td 1.0 0 3.0 2.0 TJ = 25°C f = 1.0MHz Vsig = 50mVp-p 10,000 CJ — Junction Capacitance (pF) IPPM — Peak Pulse Current, % IRSM 125 20,000 Measured at Zero Bias 1,000 Measured at Stand-Off Voltage, VWM 100 4.0 1.0 Fig. 5 – Steady State Power Derating Curve IFSM — Peak Forward Surge Current (A) L = 0.375" (9.5mm) Lead Lengths 0.50 1.58 x 1.58 x 0.040" (40 x 40 x 1mm) Copper Heat Sinks 0.25 0 25 50 75 100 125 150 TL — Lead Temperature (°C) Document Number 88364 03-May-02 100 200 Fig. 6 - Maximum Non-Repetitive/Peak Forward Surge Current 1.00 0.75 10 V(BR) — Breakdown Voltage (V) t — Time (ms) PM(AV), Steady State Power Dissipation (W) 100 Fig. 4 – Typical Junction Capacitance Fig. 3 – Pulse Waveform 0 75 TA — Ambient Temperature (°C) 150 0 50 175 200 200 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 100 50 10 1 5 10 50 100 Number of Cycles at 60 Hz www.vishay.com 3