FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 10 A, 80 V. RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 6 V • Fast switching speed This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 80 V VGSS Gate-Source Voltage ± 20 V ID Maximum Drain Current-Continuous (Note 1) 43 A (Note 1a) 10 Maximum Drain Current – Pulsed 110 Maximum Power Dissipation @TC = 25oC PD (Note 1) 69 TA = 25 C (Note 1a) 3.4 TA = 25oC (Note 1b) o TJ, TSTG Operating and Storage Junction Temperature Range W 1.3 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3570 FDD3570 13’’ 16mm 2500 2000 Fairchild Semiconductor Corporation FDD3570 Rev C(W) FDD3570 November 2000 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 360 mJ 10 A Drain-Source Avalanche Ratings (Note 2) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 40 V, ID = 10 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics 80 V 78 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C -7 15 27 16 ID(on) On–State Drain Current VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A,TJ =125°C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 14 A 40 S VDS = 40 V, f = 1.0 MHz V GS = 0 V, 2800 pF 230 pF 117 pF 2 2.4 4 V mV/°C 20 40 23 25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 40 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 40V, VGS = 10 V, ID = 9 A, 20 32 ns 12 24 ns 60 95 ns 24 38 ns 54 76 nC 9.6 nC 14 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A (Note 2) 0.72 2.8 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40 °C/W when mounted on a 1in2 pad of 2 oz copper. b) RθJA = 96 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDD3570 Rev. C(W) FDD3570 Electrical Characteristics FDD3570 Typical Characteristics 2 ID, DRAIN CURRENT (A) VGS = 10V 5.0V 6.0V 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 4.5V 30 4.0V 20 10 3.5V 1.8 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 7.0V 0.8 0 0 1 2 0 3 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 2 ID = 10 A ID = 9A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 0.03 TA = 125oC 0.02 TA = 25oC 0.01 0 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 I S, REVERSE DRAIN CURRENT (A) 50 VDS = 5V ID, DRAIN CURRENT (A) 10V 1 40 30 20 o 125 C 10 o 25 C o TA = -55 C VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD3570 Rev. C(W) FDD3570 Typical Characteristics 4000 VDS = 10V ID = 9A f = 1MHz VGS = 0 V 3500 20V 8 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 3000 CISS 2500 2000 1500 1000 2 500 0 COSS CRSS 0 0 10 20 30 40 50 60 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 40 50 60 200 RDS(ON) LIMIT 100µs 1ms 10ms 10 100ms 1s 1 10s VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 96 °C/W TA = 25°C 150 100 50 0 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIE THERMAL RESISTANCE 30 Figure 8. Capacitance Characteristics. 1000 100 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 96 °C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) SINGLE PULSE 0.001 0.0001 0.001 0.01 Duty Cycle, D = t 1 / t 2 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD3570 Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G