January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V RDS(ON) = 0.015 Ω @ VGS = 4.5 V. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. PWM controllers. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Low gate charge (typical Qg = 19 nC). SuperSOTTM-6 SOT-23 SuperSOTTM-8 D D D D 48 SO-8 84 S pin 1 Absolute Maximum Ratings S G S Very fast switching. SO-8 SOT-223 SOIC-16 5 4 6 3 7 2 8 1 TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous PD Power Dissipation for Single Operation Si4884DY Units 30 V ±20 V (Note 1a) 11.5 A (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 - Pulsed TJ,TSTG Optimized for use in switching DC/DC converters with 50 Operating and Storage Temperature Range W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W © 2001 Fairchild Semiconductor International Si4884DY Rev.A Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA TJ = 55°C ON CHARACTERISTICS mV/ oC 23 1 µA 10 µA 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A 1.7 3 TJ =125°C VGS = 4.5 V, ID = 9.5 A V mV/oC -5 0.0085 0.01 0.014 0.017 0.0125 0.015 50 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V A gFS Forward Transconductance VDS = 15 V, ID = 11.5 A 40 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 2070 pF 510 pF 235 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS= 15 V, I D = 1 A 13 21 ns tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 10 18 ns tD(off) Turn - Off Delay Time 36 58 ns tf Turn - Off Fall Time 13 23 ns Qg Total Gate Charge VDS = 15 V, ID = 11.5 A, 19 27 Qgs Gate-Source Charge VGS = 5 V 7 nC Qgd Gate-Drain Charge 6 nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50OC/W on a 1 in2 pad of 2oz copper. b. 105OC/W on a 0.04 in2 pad of 2oz copper. c. 125OC/W on a 0.006 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Si4884DY Rev.A Typical Electrical Characteristics 3 VGS= 10V 4.5 40 R DS(ON) , NORMALIZED 4.0 6.0 5.0 30 3.5 20 10 3.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 50 0 0 0.5 1 1.5 2 2 4.5 6.0 1 0.8 0 25 50 75 100 125 DRAIN-SOURCE ON-RESISTANCE 1.2 Figure 3. On-Resistance Variation Temperature. 50 50 0.03 0.02 TA = 125 oC 0.01 T A = 25 o C 0 150 2 4 V GS with 50 I S , REVERSE DRAIN CURRENT (A) 25°C 40 125°C 30 20 10 0 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) 6 8 10 ,GATE-SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TJ = -55°C VDS = 10V I D , DRAIN CURRENT (A) 40 I D = 11.5A TJ , JUNCTION TEMPERATURE (°C) 1 30 0.04 1.4 0 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON) ,(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 I D , DRAIN CURRENT (A) V GS =10V -25 10 1 0 ID = 11.5A 0.6 -50 5.0 0.5 2.5 Figure 1. On-Region Characteristics. 1.6 4.0 1.5 VDS , DRAIN-SOURCE VOLTAGE (V) 1.8 VGS = 3.5V 2.5 5 VGS =0V 10 TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si4884DY Rev.A Typical Electrical And Thermal Characteristics 3000 VDS = 10V ID = 11.5A C iss 2000 15V 8 20V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 1000 C oss 500 C rss 2 200 f = 1 MHz V GS = 0V 0 0 10 20 30 40 100 0.1 Q g , GATE CHARGE (nC) 0.2 0.5 1 2 5 10 20 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. RD S ) (ON LIM 50 IT 100 us 1m s 10m s 100 ms 1s 3 1 10 s DC VGS = 10V SINGLE PULSE RθJA = See Note 1c TA = 25°C 0.1 0.01 0.1 0.2 0.5 SINGLE PULSE RθJA =See Note 1c TA = 25°C 40 POWER (W) 20 10 30 20 10 0 0.001 1 2 5 10 30 0.01 50 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D , DRAIN CURRENT (A) 100 50 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =See Note 1c 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. Si4884DY Rev.A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G