FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. • 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V • Low gate charge (12 nC typical) • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low RDS(ON) • Motor drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G G D S Absolute Maximum Ratings Symbol S o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Continuous Drain Current @TC=25°C (Note 3) 36 A @TA=25°C (Note 1a) 10.7 Pulsed (Note 1a) 100 PD Power Dissipation TJ, TSTG @TC=25°C (Note 3) 43 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) W 1.6 Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6512A FDD6512A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6512A FDU6512A I-PAK (TO-251) Tube N/A 75 2001 Fairchild Semiconductor Corp. FDD6512A/FDU6512A Rev B (W) FDD6512A/FDU6512A November 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 10 V, ID=10A 90 mJ 10 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA Zero Gate Voltage Drain Current VDS = 16 V, IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 0.8 –3.2 1.5 V mV/°C 16 21 22 21 31 29 mΩ On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 20 V ID = 250 µA,Referenced to 25°C 14 VGS = 0 V mV/°C µA 10 (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, ID = 10.7 A VGS = 2.5 V, ID = 9.1 A VGS = 4.5 V, ID = 10.7 A, TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, 0.6 50 A ID = 10.7 A 50 S 1082 pF 277 pF 130 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, f = 1.0 MHz V GS = 0 V, VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω (Note 2) VDS = 10V, VGS = 4.5 V ID = 10.7 A, 8 16 ns 8 16 ns 24 38 ns 8 16 ns 12 19 nC 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.72 2.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 2 1in pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6512A/FDU6512A Rev. B (W) FDD6512A/FDU6512A Electrical Characteristics FDD6512A/FDU6512A Typical Characteristics 2.5 30 ID, DRAIN CURRENT (A) 3.0V 3.5V 25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 2.0V 20 15 10 5 2 VGS = 2.0V 1.5 2.5V 3.0V 3.5V 4.5V 0.5 0 0 0.5 1 1.5 2 2.5 0 3 5 10 15 20 25 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.07 1.8 ID = 10.7A VGS = 4.5V 1.6 ID = 5.4 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 1 1.4 1.2 1 0.8 0.06 0.05 0.04 TA = o 0.03 125 C 0.02 o TA = 25 C 0.01 0.6 -50 -25 0 25 50 75 100 125 150 0 175 1 o 2 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 30 TA = -55 C IS, REVERSE DRAIN CURRENT (A) o VDS = 5V o 25 C 25 ID, DRAIN CURRENT (A) 3 VGS, GATE TO SOURCE VOLTAGE (V) o 125 C 20 15 10 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6512A/FDU6512A Rev. B (W) FDD6512A/FDU6512A Typical Characteristics 1800 ID = 10.7A VDS = 5V 10V f = 1MHz VGS = 0 V 1500 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 3 2 CISS 1200 900 600 COSS 1 300 CRSS 0 0 0 2 4 6 8 10 12 0 14 4 Figure 7. Gate Charge Characteristics 12 16 20 Figure 8. Capacitance Characteristics 1000 R DS(ON)LIMIT P(pk), PEAK TRANSIENT POWER (W) 200 , DR 100 AIN CU RR EN 10 T (A) 100 µs 1ms 10ms 100ms 1s 10s 1 DC V GS = 10V SINGLE PULSE D o R θJA = 96 C/W 0.1 T A = 25 oC 0.01 SINGLE PULSE Rθ J A = 9 6 ° C / W 150 TA = 25°C 100 50 0 0.1 1 10 100 0.001 0.01 0.1 V DS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t 1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) D = 0.5 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA = 96°C/W 0.1 0.05 0.01 0.01 0.02 P(pk) Single Pulse t1 0.001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.0001 0.0001 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6512A/FDU6512A Rev. B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4