FAIRCHILD FDS3912

FDS3912
100V Dual N-Channel PowerTrench MOSFET
General Description
Features
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3 A, 100 V.
RDS(ON) = 125 mΩ @ VGS = 10 V
RDS(ON) = 135 mΩ @ VGS = 6 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• Low gate charge (14 nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
5
6
4
3
Q1
7
8
Absolute Maximum Ratings
Symbol
VDSS
1
o
TA=25 C unless otherwise noted
Parameter
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
Ratings
Units
100
V
±20
V
3
A
20
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
2
Q2
W
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3912
FDS3912
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS3912 Rev C2(W)
FDS3912
October 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Ratings
Test Conditions
Min
Typ
Max Units
(Note 2)
W DSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 50 V, ID= 3 A
90
mJ
3.0
A
Off Characteristics
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
Zero Gate Voltage Drain Current
VDS = 80 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
4
V
BVDSS
∆BVDSS
∆TJ
IDSS
On Characteristics
VGS(th)
100
ID = 250 µA,Referenced to 25°C
V
108
mV/°C
10
µA
(Note 2)
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 3 A
VGS = 6 V,
ID = 2.8 A
VGS = 10 V, ID = 3 A, T J = 125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10V,
ID = 3 A
VDS = 50 V,
f = 1.0 MHz
V GS = 0 V,
2
ID = 250 µA,Referenced to 25°C
2.5
–6
92
98
175
mV/°C
125
135
250
10
mΩ
A
11
S
632
pF
40
pF
20
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
8.5
17
ns
2
4
ns
Turn–Off Delay Time
23
37
ns
Turn–Off Fall Time
4.5
9
ns
14
20
nC
VDD = 50 V,
VGS = 10 V,
VDS = 50 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 3 A,
2.4
nC
3.8
nC
FDS3912 Rev C2(W)
FDS3912
Electrical Characteristics
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 1.3 A
IF = 3A
diF/dt = 100 A/µs
1.3
A
1.2
V
(Note 2)
0.76
30
nS
(Note 2)
106
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
2
0.5in pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS3912 Rev C2(W)
FDS3912
Drain–Source Diode Characteristics and Maximum Ratings
FDS3912
Typical Characteristics
1.8
20
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0V
ID, DRAIN CURRENT (A)
4.5V
16
12
4.0V
8
4
3.5V
1.6
VGS = 4.0V
1.4
4.5V
1.2
5.0V
10V
1
0.8
0
0
2
4
6
0
8
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
2.2
ID = 3A
VGS = 10V
2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
I D = 1.5A
0.25
TA = 125 oC
0.2
0.15
TA = 25 oC
0.1
0.05
175
3
4
5
6
7
8
9
10
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I S, REVERSE DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
VDS = 10V
16
12
8
o
25 C
TA = 125oC
4
o
-55 C
V GS = 0V
10
TA = 125oC
1
25oC
0.1
0.01
-55oC
0.001
0.0001
0
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3912 Rev C2(W)
FDS3912
Typical Characteristics
800
f = 1MHz
VGS = 0 V
VDS = 40V
ID = 3A
60V
700
CISS
8
80V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
600
500
400
300
200
2
COSS
100
CRSS
0
0
0
2
4
6
8
10
12
14
0
16
20
Figure 7. Gate Charge Characteristics.
80
100
40
10
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
60
Figure 8. Capacitance Characteristics.
100
100µs
1ms
10ms
RDS(ON) LIMIT
100ms
10s
1s
DC
1
0.1
VGS = 10V
SINGLE PULSE
o
R θJA = 135 C/W
0.01
TA = 25 oC
0.001
0.01
0.1
1
10
100
SINGLE PULSE
R θJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
1000
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + R θJA
RθJA = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3912 Rev C2(W)
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1