New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS® • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DO-201AD TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 3.0 A MECHANICAL DATA VRRM 200 V Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade IFSM 90 A VF at IF = 3.0 A 0.63 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range (1) SYMBOL VSB3200 UNIT VRRM 200 V IF(AV) 3.0 A IFSM 90 A dV/dt 10 000 V/μs TJ, TSTG - 40 to + 150 °C Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air Document Number: 89144 Revision: 27-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VSB3200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage (1) IF = 3.0 A Reverse current per diode (2) VR = 200 V Typical juntion capacitance SYMBOL TYP. MAX. VBR 200 (minimum) - 0.86 1.20 0.63 0.71 1.6 60 μA 1.2 9 mA 175 - pF TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C IR TA = 125 °C 4.0 V, 1 MHz CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) SYMBOL VSB3200 RθJA 62 RθJL 9 UNIT °C/W Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB3200-M3/54 1.08 54 1400 13" diameter paper tape and reel VSB3200-M3/73 1.08 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.4 D = 0.8 Resistive or Inductive Load 3.0 D = 0.3 D = 0.5 2.0 Average Power Loss (W) Average Forward Rectified Current (A) 3.5 2.5 2.0 1.5 1.0 D = 0.2 1.6 D = 0.1 D = 1.0 1.2 T 0.8 0.4 0.5 D = tp/T 0.375" (9.5 mm) Lead Length 0 tp 0 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89144 Revision: 27-Sep-10 New Product VSB3200 Vishay General Semiconductor 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TA = 125 °C 1 TA = 100 °C 0.1 100 TA = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 1.0 0.1 1.2 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 1 Instantaneous Forward Voltage (V) TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 20 30 40 50 60 70 80 90 Junction to Lead 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 89144 Revision: 27-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000