New Product MBR1090, MBR10100 Vishay General Semiconductor High-Voltage Schottky Rectifier FEATURES • • • • • • • TMBS® TO-220AC 2 Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PIN 1 CASE PIN 2 PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs TJ, TSTG - 65 to + 150 °C Operating junction and storage temperature range Document Number: 89193 Revision: 30-Nov-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product MBR1090, MBR10100 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE TC = 25 °C IF = 10 A 0.80 VF (1) TC = 125 °C IF = 20 A V 0.65 0.75 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage UNIT IR (2) TJ = 100 °C 100 µA 6.0 mA Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 RθJA 60 RθJC 2.0 Typical thermal resistance UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.845 4W 50/tube Tube MBR10100-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 160 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 50 0 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89193 Revision: 30-Nov-10 New Product MBR1090, MBR10100 Vishay General Semiconductor 10 000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 1000 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.0 100 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 100 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 Junction to Case 10 1 MBR 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54)MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 1 PIN 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) Document Number: 89193 Revision: 30-Nov-10 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 0.105 (2.67) 0.095 (2.41) 0.603 (15.32) 0.573 (14.55) 0.037 (0.94) 0.027(0.68) 0.205 (5.20) 0.195 (4.95) CASE 0.022 (0.56) 0.014 (0.36) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000