FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 70 W TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V ICES Collector Cut-off Current VCE = 700V, VEB = 0 100 mA ICEO Collector Cut-off Current VCE = 400V, IB = 0 250 mA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 100 mA © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 1 FJP5304D — NPN Silicon Transistor July 2008 DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 1.1 1.2 1.3 V Vf Internal Diode Forward Voltage Drop IF = 2A 2.5 V Inductive Load Switching (VCC = 200V) tstg Storage Time tf Fall Time IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200μH μs 0.6 0.1 Resistive Load Switching (VCC = 250V) tstg Storage Time tf Fall Time IC = 2A, IB1 = IB2 = 0.4A TP = 30μs 2.9 μs 0.2 * Pulse test: PW≤300μs, Duty cycle≤2% Thermal Characteristics Symbol Parameter Max. Units RθJC Thermal Resistance, Junction to Case 1.78 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 2 FJP5304D — NPN Silicon Transistor hFE 100 Vce=5V IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o Ta=125 C hFE,DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 100mA 2 IB = 50mA 1 o 25 C o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 1. Static Characteristic 10 Ic=5IB O 25 C 1 O Ta=125 C O -25 C 0.1 0.01 0.01 0.1 10 Figure 2. DC Current Gain 1 Ic=5IB VBE[V],SATURATION VOLTAGE VCE(sat)[V],SATURATION VOLTAGE 10 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 O -25 C O 25 C O Ta=125 C 0.1 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG, tF [ns], TIME tSTG, tF [μs], TIME tSTG 1 tF 0.1 100 tF VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 0.01 0.1 1 10 0.1 10 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A 1 Figure 6. Inductive Load Switching Time www.fairchildsemi.com 3 FJP5304D — NPN Silicon Transistor Typical Characteristics 100 100 o IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT TC=25 C 10 1μs 10μs 1 1ms DC 0.1 0.01 10 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 1000 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Safe Operating Area PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 4 FJP5304D — NPN Silicon Transistor Typical Characteristics (Continued) FJP5304D — NPN Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 5 FJP5304D NPN Silicon Transistor © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 6