TN4033A C TO-226 BE PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TN4033A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN4033A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 10 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 V 50 50 10 nA µA µA ON CHARACTERISTICS VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 100 µA, VCE = 5.0 V I C=100mA, VCE=5.0V,TA = -55°C I C = 100 mA, VCE = 5.0 V I C = 500 mA, VCE = 5.0 V I C = 1.0 A, VCE = 5.0 V I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 15 mA VBE( on) Base-Emitter On Voltage I C = 500 mA, VCE = 0.5 V hFE DC Current Gain 75 40 100 70 25 300 0.15 0.5 0.9 V V V 1.1 V SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF hfe Small-Signal Current Gain I C = 50 mA, VCE = 10 V, f = 100 MHz 1.0 4.0 SWITCHING CHARACTERISTICS ts Storage Time I C = 500 mA, IB1 = IB2 = 50 mA 350 ns ton Turn-On Time I C = 500 mA, IB1 = 50 mA 100 ns tf Fall Time I C = 500 mA, IB1 = IB2 = 50 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% TN4033A PNP General Purpose Amplifier (continued) 300 V CE = 5V 250 125 °C 200 25 °C 150 100 50 - 40 °C 0 0.1 0.3 1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA) 1000 VBESAT- BASE-EMITTER VOLTAGE (V) P6 Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 ºC 25 °C 125 °C 0.6 0.4 10 IC 100 - COLLECTOR CURRENT (mA) 1000 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.6 β = 10 0.4 25 °C 125 °C 0.2 - 40 ºC 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 ºC 0.6 0.4 0.2 0.1 25 °C 125 °C 1 10 I C - COLLECTOR CURRENT (mA) 50 P 67 Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 500 f = 1.0 MHz V CB = 50V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 10 1 0.1 200 100 50 C ibo 20 C obo 10 25 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) P6 150 6 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 TN4033A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current Switching Times vs Collector Current 500 240 VCE = -10V t off 400 TIME (ns) 160 VCE = -1.0V 120 80 0 300 I B1 = I B2 = I C V CC = - 30V 10 200 100 40 t on 1 2 I C 20 100 - COLLECTOR CURRENT (mA) 200 0 10 100 500 I C - COLLECTOR CURRENT (mA) P6 P6 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (ns) 200 TO-226 0.75 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 1000 TN4033A PNP General Purpose Amplifier