MMPQ3725 TN3725A E C B E B E TO-226 BE E B C SOIC-16 B C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1997 Fairchild Semiconductor Corporation Max TN3725A 1.0 8.0 50 Units MMPQ3725 1.0 8.0 125 125 240 W mW/°C °C/W °C/W °C/W °C/W TN3725A / MMPQ3725 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA= 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, IB = 0 40 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 10 µA, VBE = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, ICE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current ICES Collector Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 100°C VCE = 80 V, VEB = 0 1.7 120 10 µA µA µA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC =100mA,VCE =1.0V,TA = -55°C IC = 300 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC =500mA,VCE =1.0V,TA = -55°C IC = 800 mA, VCE = 2.0 V IC = 1.0 A, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 100 mA, I B = 10 mA IC = 300 mA, I B = 30 mA IC = 500 mA, I B = 50 mA IC = 800 mA, I B = 80 mA IC = 1.0 A, I B = 100 mA IC = 10 mA, IB = 1.0 mA IC = 100 mA, I B = 10 mA IC = 300 mA, I B = 30 mA IC = 500 mA, I B = 50 mA IC = 800 mA, I B = 80 mA IC = 1.0 A, I B = 100 mA 30 60 30 40 35 20 20 25 150 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V V V V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance I C = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz 300 MHz 10 pF 55 pF 35 ns 10 ns 30 ns SWITCHING CHARACTERISTICS (except MMPQ3725) ton Turn-on Time td Delay Time tr Rise Time toff Turn-off Time VCC = 30 V, IC = 500 mA 60 ns ts Storage Time I B1 = IB2 = 50 mA 50 ns tf Fall Time 30 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% VCC = 30 V, VBE( off ) = 3.8 V, I C = 500 mA, IB1 = 50 mA TN3725A / MMPQ3725 NPN Switching Transistor (continued) Typical Pulsed Current Gain vs Collector Current VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics 200 VCE = 1V 150 125 ºC 25 °C 100 - 40 ºC 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Collector-Emitter Saturation Voltage vs Collector Current 0.8 β = 10 0.6 25 °C 0.4 125 ºC 0.2 - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) P 25 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 - 40 ºC 25 °C 0.6 125 º C 0.4 β = 10 0.2 0 1 IC 10 100 - COLLECTOR CURRENT (mA) 1000 Base-Emitter ON Voltage vs Collector Current 0.8 - 40 ºC 0.6 25 °C 0.4 125 ºC VCE = 1V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P2 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (uA) VBESAT- BASE-EMITTER VOLTAGE (V) P2 0.8 1000 100 VCB = 40V 10 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( ºC) P 25 150 25 TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics Input/Output Capacitance vs. Reverse Bias Contours of Constant Bandwidth Product (fT) Switching Time vs. Collector Current Turn On / Turn Off Times vs. Collector Current Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Base-Emitter Voltage TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics (continued) Rise Time vs. Collector and Turn On Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (W) 1 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Test Circuit 3.8 V 30 V 15 Ω VIN = 9.7 V tr and tf ≤ 1 ns PW = 1.0 µs ZIN = 50 Ω Duty Cycle < 2% VOUT 1.0 KΩ Ω 1.0 µF 43 Ω 10 µF VIN 100 Ω 62 Ω FIGURE 1: Switching Time Test Circuit (IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA) To sampling scope tr < 1.0 ns ZIN ≥ 100 KΩ TN3725A / MMPQ3725 NPN Switching Transistor