KSB794/795 KSB794/795 Audio Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Base Volage Value Units : KSB794 : KSB795 - 60 - 80 V V : KSB794 : KSB795 - 60 - 80 V V Collector-Emitter Volage VEBO Emitter-Base Voltage -8 V IC Collector Current (DC) - 1.5 A ICP *Collector Current (Pulse) -3 A IB Base Current (DC) PC Collector Dissipation (Ta=25°C) - 0.15 A 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C R1.= 10 kΩ R2.= 500Ω * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 60V, IE = 0 ICER Collector Cut-off Current VCE = - 60V, RBE = 51Ω @ TC= 125°C ICEX1 Collector Cut-off Current VCE = - 60V, VBE (off) = 1.5V ICEX2 Collector Cut-off Current VCE = - 60V, VBE (off) = 1.5V @ TC= 125°C Min. Max. - 10 Units µA -1 mA µA - 10 -1 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1A -1 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 1mA -1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 1A, IB = - 1mA -2 V 1000 2000 mA 30000 * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed. hFE Classificntion Classification R O Y hFE2 2000 ~ 5000 4000 ~ 10000 8000 ~ 30000 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB794/795 Typical Characteristics -1.8 -1.6 IC(A), COLLECTOR CURRENT 100000 -3 I B= uA 00 0uA -2 0 I B= VCE=-2V Plused uA 150 I B=- -1.4 -1.2 IB=-100uA -1.0 -0.8 IB =-80uA -0.6 -0.4 hFE, DC CURRENT GAIN IB=-100 0uA IB = -5 00 uA -2.0 10000 1000 -0.2 -0.0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 100 -0.01 -5.0 -0.1 Figure 1. Static Characteristic Figure 2. DC current Gain -10 10 IC =2000IB Single pulse IC(A), COLLECTOR CURRENT 30 0u s -1 VCE (SAT) -0.1 -0.1 3m 1ms s Dis DC sip atio nL imit ed 1 S/ b 0.1 s 0u =3 PW 0us 10 VBE(SAT) Lim ite d 0.01 -1 1 IC[A],COLLECTOR CURRENT 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 14 140 12 PD[W], POWER DISSIPATION 160 120 dT[%], IC DERATING -10 IC[A], COLLECTOR CURRENT VCE(V), COLLECTOR-EMITTER VOLTAGE VCE(SAT). VBE(SAT)[V], SATURATION VOLTAGE -1 10 100 80 S/b Lim ited 60 Di ss ipa tio n 40 20 Lim ite d 0 8 6 4 2 0 0 25 50 75 100 125 150 175 200 O TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSB794/795 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3