Ordering number : ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. unit : mm 2079D [TT2190LS] 10.0 4.5 3.2 2.8 0.6 16.1 16.0 3.5 7.2 • Package Dimensions 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220FI(LS) Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V IC 8 A ICP 20 A 2.0 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 35 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current ICBO ICES Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max Unit 10 µA 1.0 mA 130 mA 800 V 40 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100589 No.7551-1/4 TT2190LS Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Diode Forward Voltage VF Fall Time min typ VCE=5V, IC=1A 10 VCE=5V, IC=5A 5 3 V 1.5 V 8 IEC=7A IC=3A, IB1=0.6A, IB2=--1.2A tf Unit max IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A hFE1 hFE2 DC Current Gain Ratings Conditions 2 V 0.3 µs Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 66.7Ω 50Ω + 470µF + 100µF VBE= --5V IC -- VCE 8 A VCE=5V 8 0.6A 4 0.4A 3 0.2A 2 0.05A 6 5 4 3 2 1 IB=0 0 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 0 0 10 0°C 12 = Ta 25 °C C 0° 10 -4 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 5 7 10 IT01802 0.8 1.0 1.2 1.4 IT01801 IC / IB=5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.6 VCE(sat) -- IC 5 VCE=5V 3 0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 5 0.2 IT01800 C 2 Ta=--40 ° 1 2 1.0 25°C 0 120°C 5 7 25° C -40°C 1.0A 0.8A 1.2A 20° C 1.4A Ta= 1 1.6A Collector Current, IC -- A 6 1 DC Current Gain, hFE IC -- VBE 9 1.8A 2.0 7 Collector Current, IC -- A VCC=200V 7 5 3 2 7 Ta= --4 25°C 0°C 5 120°C 0.1 3 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT01803 No.7551-2/4 TT2190LS SW Time -- IC tstg 5 Switching Time, SW Time -- µs VCC=200V IC / IB1=5 IB2 / IB1=2 R load 3 2 1.0 7 5 tf 3 2 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A Collector Current, IC -- A on ati er op Collector Current, IC -- A DC 3 7 5 3 2 2 3 5 7 2 1.0 3 5 Base Current, IB2 -- A 7 IT01805 Reverse Bias A S O L=500 H IB2=--1A Tc=25°C Single pulse 10 7 5 3 2 1.0 7 5 3 2 Tc=25°C Single pulse 2 tf 1.0 2 s s 10m 5W 1m P C =3 1.0 2 5 µs 00 =1 s PT 0µ 30 IC=8A 1.0 7 5 3 2 0.01 ts tg 3 3 3 2 0.1 7 5 3 2 10 IT01804 ICP=20A 10 7 5 5 0.1 0.1 7 Forward Bias A S O 5 3 2 VCC=200V IC=3A IB1=0.6A R load 7 0.1 0.1 SW Time -- IB2 10 Switching Time, SW Time -- µs 7 0.1 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 1000 IT05398 10 3 5 7 100 2 3 5 7 1000 2 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 2.5 2 3 IT01807 PC -- Tc 40 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 35 2.0 1.5 No he at sin k 1.0 0.5 0 30 20 10 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01808 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01809 No.7551-3/4 TT2190LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7551-4/4