Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions · Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being equivalent to the 2SA1370 and the other the 2SC3467, placed in one package. unit:mm 2097A [FP212] 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector Electrical Connection 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector SANYO:PCP5 (Bottom view) (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)200 V Collector-to-Emitter Voltage VCEO VEBO (–)200 V IC (–)100 mA Collector Current (Pulse) ICP (–)200 mA Base Current (–)10 mA Collector Dissipation IB PC Mounted on ceramic board (250mm2×0.8mm) 1 unit 0.75 W Total Power Dissipation PT Mounted on ceramic board (250mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Emitter-to-Base Voltage Collector Current (–)5 V 1.0 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta=25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain-Bandwidth Product Output Capacitance fT Cob Reverse Transfer Capacitance Cre C-E Saturation Voltage VCE(sat) B-E Saturation Voltage VBE(sat) Conditons Ratings min typ VCB=(–)150V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA max (–)100 nA (–)100 nA 60 VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA Unit 200 150 MHz (2.6) 1.7 (1.7) 1.2 pF pF (–)0.6 V (–)1.0 V C-B Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)200 V C-E Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 (–)200 V (–)5 V E-B Breakdown Voltage Marking:212 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/82494MT (KOTO) A8-9729 No.4497-1/4 FP212 No.4497-2/4 FP212 No.4497-3/4 FP212 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4497-4/4