Ordering number:EN4698 FP215 PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Features Package Dimensions · Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. · The FP215 is formed with two chips, being equivalent to the 2SA1724, placed in one package. · Excellent in thermal equilibrium and pair capability. unit:mm 2108A [FP215] 1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) Electrical Connection 1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) (Top view) SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO VEBO –20 V IC –300 mA –600 mA 0.75 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP Collector Dissipation Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg –3 Mounted on ceramic board (250mm2×0.8mm) 1 unit Mounted on ceramic board (250mm2×0.8mm) V 1.0 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta=25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 hFE2 DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product hFE1 (small-large) VBE (large-small) fT Conditons VCE=–5V, IC=–50mA VCE=–5V, IC=–3000mA 15 VCE=–5V, IC=–50mA 0.6 Unit –0.1 µA –1.0 µA 100 5 0.93 3.0 1.5 GHz 4.9 pF 4.4 Cob Reverse Transfer Capacitance Cre VCB=–10V, f=1MHz B-E Saturation Voltage max VCE=–5V, IC=–100mA Output Capacitance VCE(sat) VBE(sat) typ VCB=–20V, IE=0 VEB=–2V, IC=0 VCE=–5V, IC=–50mA VCB=–10V, f=1MHz C-E Saturation Voltage Ratings min IC=–100mA, IB=–10mA IC=–100mA, IB=–10mA 25 mV pF –0.4 –1.0 V –0.9 –1.2 V Note:The specifications shown above are for individual transistor. However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors. Marking:215 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3 FP215 No.4698-2/3 FP215 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4698-3/3