SANYO FX205

Ordering number:EN4917
FX205
P-Channel Silicon MOSFET
Very High-Speed Switching Applications
Features
Package Dimensions
· Low ON-resistance.
· Very high-speed switching.
· Low-voltage drive.
unit:mm
2121
[FX205]
Switching Time Test CIrcuit
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
SANYO:XP5
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
–60
V
Gate-to-Source Voltage
VGSS
±25
V
–2
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
PD
Tc=25˚C
PD
Tch
Mounted on ceramic board (750mm2×0.8mm)
Channel Temperature
Storage Temperature
Tstg
–8
A
8
W
2
W
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
V(BR)GSS
IDSS
Conditions
Ratings
min
ID=–1mA, VGS=0
–60
IG=±100µs, VDS=0
VDS=–60V, VGS=0
±2 5
typ
max
Unit
V
V
–100
µA
±10
µA
VGS=±20V, VDS=0
Forward Transfer Admittance
IGSS
VGS(off)
| Yfs |
Static Drain-to-Source ON-State Resistance
RDS(on)
ID=–1A, VGS=–10V
300
400
mΩ
RDS(on)
450
650
mΩ
240
pF
150
pF
Cutoff Voltage
VDS=–10V, I D=–1mA
VDS=–10V, I D=–1A
–1.5
1.2
–2.5
2
V
S
Input Capacitance
Ciss
ID=–1A, VGS=–4V
VDS=–20V, f=1MHz
Output Capacitance
Coss
VDS=–20V, f=1MHz
Reverse Transfer Capacitance
Crss
40
pF
Turn-ON Delay Time
td(on)
tr
VDS=–20V, f=1MHz
See specified Test Circuit
12
ns
See specified Test Circuit
16
ns
See specified Test Circuit
85
ns
Fall Time
td(off)
tf
See specified Test Circuit
55
Diode Forward Voltage
VSD
IS=–2A, VGS=0
Rise Time
Turn-OFF Delay Time
–1.0
ns
–1.5
V
· Marking:205
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42895MO (KOTO) BX-1506 No.4917-1/3
FX205
No.4917-2/3
FX205
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4917-3/3