SANYO 2SK2348

Ordering number : EN5415A
N-Channel Silicon MOSFET
2SK2348
High-Voltage, High-Speed
Switching Applications
Features
Package Dimensions
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
unit: mm
2131-TO-3JML
[2SK2348]
1 : Gate
2 : Drain
3 : Source
SANYO: TO-3JML
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Channel Temperature
Storage temperature
Tch
Tstg
Conditions
Ratings
1200
±30
14
28
4.6
160
150
–55 to +150
PW≤10µs, duty cycle≤1%
Tc=25°C
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to Source Leak Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
ID=1mA, VGS=0
VDS=1200V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=7A
ID=7A, VGS=10V
Ciss
Coss
Crss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
min
1200
1.5
3.0
typ
max
1.0
±100
3.5
6.0
1.0
3000
500
250
1.5
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5415-1/4
2SK2348
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Ratings
Conditions
td(on)
tr
td(off)
tf
VSD
trr
min
typ
45
180
850
230
ID=7A, VGS=10V,
VDD=200V, RGS=50Ω
IS=14A, VGS=0
IS=14A, di/dt=100A/µs
0.75
max
Unit
ns
ns
ns
ns
V
µs
1.5
1.5
Switching Time Test Circuit
I D - VDS
I D - VDS
20
=1
0V
S=
10
V
Drain Current, I D – A
16
VG
Drain Current, I D – A
8
6
4V
4
3.5V
2
6V
GS
4.5V
V
5V
6V
10
5V
12
8
4V
4
3V
0
0
4
8
12
16
0
0
20
Drain-to-Source Voltage, VDS – V
20
30
40
50
Drain-to-Source Voltage, VDS – V
I D - VGS
25
3V
10
I D - Tc
25
VDS =20V
VG S =10V
Tc=-25°C
20
Drain Current, I D – A
Drain Current, I D – A
20
25°C
15
75°C
10
5
0
0
15
VD
S=
20
V
10
10V
5
2
4
6
8
10
Gate-to-Source Voltage, VGS – V
12
14
0
-80
-40
0
40
80
Case Temperature, Tc – °C
120
160
No.5415-2/4
2SK2348
VGS(off) - Tc
4.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
t d(off)
1000
0.4
7
5
3
tf
2
tr
100
7
t d(on)
5
3
0
-80
-40
0
40
80
120
2
7 0.1
160
2
3
Case Temperature, Tc – °C
Static Drain-to-Source
ON-State Resistance, RDS (on) – Ω
Static Drain-to-Source
ON-State Resistance, RDS (on) – Ω
1.8
1.6
1.4
1.2
1.0
0.8
2
4
6
8
10
12
10
20V
7
2
1.0
7
5
3
2
7 0.1
3
5
2
7 1.0
3
5
2
7 10
Drain Current, ID – A
Ciss,Coss,Crss – pF
5
Ciss
3
2
1000
7
Coss
5
3
Crss
2
12
16
20
V
20
0.4
-40
0
40
80
Case Temperature, Tc – °C
120
160
| yf s | - I D
VD S =20V
VG S =10V
2
25°C
10
7
5°C
=–2
5
Tc
75°
C
3
2
1.0
7
5
3
7 0.1
2
3
5
7 1.0
2
3
5
2
7 10
3
24
Drain-to-Source Voltage, VDS – V
28
32
ASO
IDP
10µs
,,,,,,,,
ID
,,,,,,,,
10,,,,,,,,
7,,,,,,,,
,,,,,,,,
5
,,,,,,,,
3
3
2
7
8
=1
0.8
5
VG S =0
f= 1MHz
4
3
Drain Current, ID – A
Ciss,Coss,Crss - VDS
0
2
0V
S
VD
1.2
2
3
10000
100
7 10
1.6
Drain Current, ID – A
2
5
2.0
3
Forward Transfer Admittance, | yfs | – S
2
VDS =10V
Forward Transfer Admittance, | yfs | – S
Tc =25°C
3
3
2.4
0
-80
14
| yf s | - I D
5
2
ID =7A
Gate-to-Source Voltage, VGS – V
3
7 1.0
R DS(on) - Tc
2.8
ID =7A
Tc=25°C
0.6
0
5
Drain Current, ID – A
R DS(on) - VGS
2.0
2
VDD =200V
VGS =10V
P.W.= 1µs
D.C.≤0.5%
2
Switching Time, SW Time – ns
Cutoff Voltage, VGS(off) – V
3.6
SW Time - I D
3
VDS =10V
ID =1mA
10
0µ
s
1m
2
1.0 Operation in this area
7 is limited by RDS(on).
5
10
ms
10
0m
DC
s
op
er
ati
on
3
2
0.1 Tc =25°C
7 Single pulse
5
2
3
10
5
7 100
2
3
5
7 1000
2
Drain-to-Source Voltage, VDS – V
No.5415-3/4
2SK2348
P D - Ta
4.6
4
No
3
he
at
sin
k
2
1
0
0
20
40
60
80
100
P D - Tc
200
Allowable Power Dissipation, PD – W
Allowable Power Dissipation, PD – W
5
120
Ambient Temperature, Ta – °C
140
160
160
120
80
40
0
0
20
40
60
80
100
120
Case Temperature, Ta – °C
140
160
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1997. Specifications and information herein are subject to
change without notice.
No.5415-4/4