Ordering number : EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). unit: mm 2131-TO-3JML [2SK2348] 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Channel Temperature Storage temperature Tch Tstg Conditions Ratings 1200 ±30 14 28 4.6 160 150 –55 to +150 PW≤10µs, duty cycle≤1% Tc=25°C Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=7A ID=7A, VGS=10V Ciss Coss Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 1200 1.5 3.0 typ max 1.0 ±100 3.5 6.0 1.0 3000 500 250 1.5 Unit V mA nA V S Ω pF pF pF Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72597TS (KOTO) TA-1033 No.5415-1/4 2SK2348 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Ratings Conditions td(on) tr td(off) tf VSD trr min typ 45 180 850 230 ID=7A, VGS=10V, VDD=200V, RGS=50Ω IS=14A, VGS=0 IS=14A, di/dt=100A/µs 0.75 max Unit ns ns ns ns V µs 1.5 1.5 Switching Time Test Circuit I D - VDS I D - VDS 20 =1 0V S= 10 V Drain Current, I D – A 16 VG Drain Current, I D – A 8 6 4V 4 3.5V 2 6V GS 4.5V V 5V 6V 10 5V 12 8 4V 4 3V 0 0 4 8 12 16 0 0 20 Drain-to-Source Voltage, VDS – V 20 30 40 50 Drain-to-Source Voltage, VDS – V I D - VGS 25 3V 10 I D - Tc 25 VDS =20V VG S =10V Tc=-25°C 20 Drain Current, I D – A Drain Current, I D – A 20 25°C 15 75°C 10 5 0 0 15 VD S= 20 V 10 10V 5 2 4 6 8 10 Gate-to-Source Voltage, VGS – V 12 14 0 -80 -40 0 40 80 Case Temperature, Tc – °C 120 160 No.5415-2/4 2SK2348 VGS(off) - Tc 4.0 3.2 2.8 2.4 2.0 1.6 1.2 0.8 t d(off) 1000 0.4 7 5 3 tf 2 tr 100 7 t d(on) 5 3 0 -80 -40 0 40 80 120 2 7 0.1 160 2 3 Case Temperature, Tc – °C Static Drain-to-Source ON-State Resistance, RDS (on) – Ω Static Drain-to-Source ON-State Resistance, RDS (on) – Ω 1.8 1.6 1.4 1.2 1.0 0.8 2 4 6 8 10 12 10 20V 7 2 1.0 7 5 3 2 7 0.1 3 5 2 7 1.0 3 5 2 7 10 Drain Current, ID – A Ciss,Coss,Crss – pF 5 Ciss 3 2 1000 7 Coss 5 3 Crss 2 12 16 20 V 20 0.4 -40 0 40 80 Case Temperature, Tc – °C 120 160 | yf s | - I D VD S =20V VG S =10V 2 25°C 10 7 5°C =–2 5 Tc 75° C 3 2 1.0 7 5 3 7 0.1 2 3 5 7 1.0 2 3 5 2 7 10 3 24 Drain-to-Source Voltage, VDS – V 28 32 ASO IDP 10µs ,,,,,,,, ID ,,,,,,,, 10,,,,,,,, 7,,,,,,,, ,,,,,,,, 5 ,,,,,,,, 3 3 2 7 8 =1 0.8 5 VG S =0 f= 1MHz 4 3 Drain Current, ID – A Ciss,Coss,Crss - VDS 0 2 0V S VD 1.2 2 3 10000 100 7 10 1.6 Drain Current, ID – A 2 5 2.0 3 Forward Transfer Admittance, | yfs | – S 2 VDS =10V Forward Transfer Admittance, | yfs | – S Tc =25°C 3 3 2.4 0 -80 14 | yf s | - I D 5 2 ID =7A Gate-to-Source Voltage, VGS – V 3 7 1.0 R DS(on) - Tc 2.8 ID =7A Tc=25°C 0.6 0 5 Drain Current, ID – A R DS(on) - VGS 2.0 2 VDD =200V VGS =10V P.W.= 1µs D.C.≤0.5% 2 Switching Time, SW Time – ns Cutoff Voltage, VGS(off) – V 3.6 SW Time - I D 3 VDS =10V ID =1mA 10 0µ s 1m 2 1.0 Operation in this area 7 is limited by RDS(on). 5 10 ms 10 0m DC s op er ati on 3 2 0.1 Tc =25°C 7 Single pulse 5 2 3 10 5 7 100 2 3 5 7 1000 2 Drain-to-Source Voltage, VDS – V No.5415-3/4 2SK2348 P D - Ta 4.6 4 No 3 he at sin k 2 1 0 0 20 40 60 80 100 P D - Tc 200 Allowable Power Dissipation, PD – W Allowable Power Dissipation, PD – W 5 120 Ambient Temperature, Ta – °C 140 160 160 120 80 40 0 0 20 40 60 80 100 120 Case Temperature, Ta – °C 140 160 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997. Specifications and information herein are subject to change without notice. No.5415-4/4