SANYO FP502

Ordering number:EN5263
FP502
N-Channel Silicon MOSFET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.
unit:mm
2132
1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)
[FP502]
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Allowable Power Dissipation
Storage Temperature
PD
PD
Conditions
Ratings
Unit
Tc=25˚C, 1 unit
3.5
Mounted on ceramic board (250mm2×0.8mm) 1 unit
1.5
W
–55 to +150
˚C
Tstg
W
[MOS block]
Drain-to-Source Voltage
Gate-to-Source Voltage
VDSS
VGSS
Drain Current (DC)
11
V
±10
V
2
A
ID
Drain Current (Pulse)
IDP
Channel Temperature
PW≤10µs, duty cycle ≤1%
8
A
Tch
150
˚C
IO
500
mA
[Diode block]
Average Rectified Current
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[MOS block]
D-S Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0
VDS=10.4V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
Forward Transfer Admittance
IGSS
VGS(off)
| Yfs |
Static Drain-to-Source ON-State Resistance
RDS(on)
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
11
V
400
µA
±10
µA
4.0
V
140
200
mΩ
ID=500mA, VGS=4V
VDS=10V, f=1MHz
200
320
mΩ
150
pF
VDS=10V, f=1NHZ
VDS=10V, f=1MHz
200
pF
45
pF
VDS=10V, ID=1A
ID=1A, VGS=10V
1.0
1.2
2.2
S
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4
FP502
Continued from preceding page.
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[MOS block]
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
td(on)
See specified Test Circuit.
10
ns
tr
See specified Test Circuit.
25
ns
td(off)
See specified Test Circuit.
25
ns
tf
See specified Test Circuit.
20
ns
[Diode block]
Forward Voltage
VF
IF=500mA
0.4
0.45
V
Reverse Recovery Time
trr
IF=500mA, di/dt=50A/µs
20
30
ns
Switching Time Test Circuit
Electrical Connection
1:Source, Anode
2:Common (Drain, Cathode)
3:Source, Anode
4Common (Drain, Cathode)
5:Gate
6:Common (Drain, Cathode)
7:Common (Drain, Cathode)
(Top view)
No.5263-2/4
FP502
No.5263-3/4
FP502
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5263-4/4