SANYO FW211

Ordering number:EN5579A
N-Channel Silicon MOSFET
FW211
DC-DC Converter Applications
Features
Package Dimensions
· Low ON resistance.
· 2.5V drive.
unit:mm
2129
[FW211]
5
4
0.595
1.27
0.1
1.5
5.0
1:Source 1
2:Gate 1
3:Source 2
4:Gate 2
5:Drain 2
6:Drain 2
7:Drain 1
8:Drain 1
0.2
1.8max
1
6.0
4.4
0.3
8
0.43
Specifications
SANYO:SOP8
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
Drain Current (DC)
20
V
±10
V
6
A
ID
Drain Current (pulse)
IDP
Allowable Power Dissipation
Total Dissipation
PD
PT
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
52
A
1.7
W
Electrical Characteristics at Ta=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
Conditions
ID=1mA, VGS=0
Ratings
min
typ
max
20
Unit
V
VDS=20V, VGS=0
100
µA
±10
µA
1.3
V
27
35
mΩ
48
mΩ
VGS=±8V, VDS=0
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source ON-State Resistance
RDS(on)1
ID=5A, VGS=4V
RDS(on)2
Ciss
ID=2A, VGS=2.5V
35
Input Capacitance
VDS=10V, f=1MHz
VDS=10V, f=1MHz
750
pF
520
pF
300
pF
20
ns
Cutoff Voltage
VDS=10V, ID=1mA
VDS=10V, ID=5A
0.4
9
15
S
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
VDS=10V, f=1MHz
See Specified Test Circuit
tr
See Specified Test Circuit
200
ns
td(off)
See Specified Test Circuit
150
ns
tf
See Specified Test Circuit
150
ns
30
nC
5
nC
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain "Miller" Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, VGS=10V, ID=1A
7
IS=5A, VGS=0
1.0
nC
1.2
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-0861 No.5579-1/3
FW211
Switching Time Test Circuit
4V
0V
VDD=10V
VIN
ID=5A
RL=2Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
G
FW211
P.G
50Ω
S
I D - VDS
3
2
6
˚C
5
4
- 25
4
7
Ta =
1.5V
5
75˚C
8
25˚C
8V
6
I D - VGS
VDS =10V
9
Drain Current, ID – A
Drain Current, ID – A
7
10
6V
4
3V
2.5 V
V
2V
8
3
2
1
1
VGS=1V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.2
3
2
10
7
5
Ta
=-
˚C
25
5˚C
2
˚C
75
3
2
1.0
7
5
3
2
0.1
0.01
2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
1.8
40
2A
30
20
10
1
2
3
4
5
6
7
8
9
10
0.9
1.0
I F - VSD
30
S =4V
ID =5A,VG
1.0
7
5
3
2
5˚C
2.5V
,VGS =
3
2
0.1
7
5
Ta =7
Forward Current, IF – A
Static Drain-to-Source
ON-State Resistance, RDS (on) – mΩ
50
3
2
10
0
-60
1.6
ID=5A
10
7 VGS=0
5
60
20
1.4
Gate-to-Source Voltage, VGS – V
70
ID =2A
1.2
50
0
0
2 3 5 7 100
R DS(on) - Tc
40
1.0
Tc=25˚C
Drain Current, ID – A
80
0.8
R DS(on) - VGS
60
VDS=10V
Static Drain-to-Source
ON-State Resistance, RDS (on) – mΩ
Forward Transfer Admittance, | yfs | – S
| yfs | - I D
100
7
5
0.6
Gate-to-Source Voltage, VGS – V
Drain-to-Source Voltage,VDS – V
25˚C
0.1
- 25˚C
0
0
0
0
-40
-20
0
20
40
60
80
Case Temperature, Tc – ˚C
100
120
140
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Diode Forward Voltage, VSD – V
No.5579-2/3
FW211
Ciss,Coss,Crss - VDS
10000
VDS=10V
9 ID =1A
Gate-to-Source Voltage, VGS – V
7
Ciss,Coss,Crss – pF
5
3
2
1000
Ciss
7
5
Coss
3
Crss
2
VGS - Qg
10
f=1MHz
8
7
6
5
4
3
2
1
100
0
2
4
6
8
10
12
14
16
18
0
0
20
5
Drain-to-Source Voltage,VDS – V
SW Time - I D
1000
Drain Current, ID – A
3
2
tr
Switching Time, SW Time – ns
5
3
tf
2
td
(of
100
f)
7
5
3
t d(on)
30
A S O
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
10
I =6A
7 D
5
3
2
10 µs
10
0µ
s
1m
s
10m
s
10
0m
s
DC
1.0 Operation in this
7 area is limited
5 by RDS(on).
op
era
tio
n
2
3
5
7 1.0
2
3
5
7 10
0.1 1unit
7 Mounted ceramic board (1000mm2 × 0.8mm)
5
2
3
5 7 10
2
3
5 7 1.0
2
Drain Current, ID – A
P D (FET2) - P D (FET1)
2.0
M
1.4
ou
nte
1.2
d
ce
ram
1.0
ic
bo
ard
0.8
(1
00
0m
0.6
m2
×0
.8m
m)
0.4
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PD -
2.5
1.8
1.6
2
3
Drain-to-Source Voltage, VDS – V
Allowable Power Disipation, PD – W
Allowable Power Disipation, PD (FET2) – W
25
1pulse
10
7 0.1
0
20
3
2 Ta= 25˚C
2
0
15
100
7 I DP = 5 2 A
5
VDD =10V
VGS=4V
7
10
Total Gate Charge, Qg – nC
1.8
Allowable Power Disipation, PD (FET 1) – W
2.0
Ta
2.0
1.7
1.5
To
tal
Di
ss
1u
1.0
nit
ip
ati
on
0.5
0
0
Mounted ceramic board (1000mm2 × 0.8mm)
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.
PS No.5579-3/3