KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Ratings -160 Units V -150 V -8 V Collector Current -700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -160 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -150 V BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -8 V ICBO Collector Cut-off Current VCB= -100V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE * DC Current Gain VCE= -2V, IC= -50mA VCE (sat) * Collector-Emitter Saturation Voltage IC= -200mA, IB= -20mA 70 -0.3 -0.4 400 VBE (sat) * Base-Emitter Saturation Voltage IC= -200mA, IB= -20mA -0.9 -1.0 fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 50 Cob Output Capacitance VCB= -10V, IE=0, f=1MHz V V MHz 10 pF * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 KSA709 Typical Characteristics 1000 -100 IB = -0.8mA VCE = -5V IC[mA], COLLECTOR CURRENT IB = -0.6mA IB = -0.4mA -60 -40 IB = -0.2mA -20 hFE, DC CURRENT GAIN -80 -2 -4 -6 -8 10 1 -0.1 0 0 100 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 Figure 2. DC current Gain -10 -1000 IC = 10 IB IC[mA], COLLECTOR CURRENT VCE = -1V VBE(sat) -1 -0.1 -100 -10 VCE(sat) -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT -1 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 KSA709 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FPS™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ EnSigna™ I2C™ i-Lo™ FACT™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10