KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV (MAX) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 30 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V ICBO Collector Cut-off Current VCB=25V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=3V, IC=0.5mA VCE (sat) Collector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.1 0.2 V VBE (on) Base-Emitter On Voltage VCE=3V, IC=0.5mA 0.62 0.7 V fT Current Gain Bandwidth Product VCE=3V, IC=1mA 100 NL Noise Level VCC=12V, IC=0.1mA RS=25kΩ AV=80dB, f=1KHz 30 V 120 50 nA 100 nA 1000 MHz 50 mV hFE Classification Classification Y G L V hFE 120 ~ 240 200 ~ 400 350 ~ 700 600 ~ 1000 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC900 Typical Characteristics 10 VCE=3V 450 IB = 80µA 8 400 7 IB = 70µA 6 IB = 60µA 5 IB = 50µA 4 IB = 40µA 3 IB = 30µA 2 IB = 20µA 1 IB = 10µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 500 IB = 90µA 9 2 4 6 8 10 12 14 16 300 250 200 150 100 50 0 0.01 0 0 350 18 20 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 VCE=3V IC =10IB 10 1 V BE(sat) 0.1 VCE(sat) 0.01 0.1 1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 10 1 0.1 0.0 100 0.6 0.8 1.0 1.2 10 Cob[pF], CAPACITANCE f = 1MHz IE=0 1 10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 100 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 0.2 1000 VCE =3V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B1, September 2002 KSC900 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1