BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter : BC237 : BC238/239 Value 50 30 Units V V VCEO Collector-Emitter Voltage : BC237 : BC238/239 45 25 V V VEBO Emitter-Base Voltage : BC237 : BC238/239 6 5 V V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 BVEBO Collector Cut-off Current : BC237 : BC238/239 ICES Test Condition Min. Typ. Max. Units IC=2mA, IB=0 45 25 V V IE=1µA, IC=0 6 5 V V 0.2 0.2 VCE=50V, VBE=0 VCE=30V, VBE=0 15 15 120 nA nA hFE DC Current Gain VCE=5V, IC=2mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 0.07 0.2 800 0.2 0.6 V V VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 0.73 0.87 0.83 1.05 V V 0.55 0.62 0.7 150 85 250 VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA fT Current Gain Bandwidth Product VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 Cib Input Base Capacitance VEB=0.5V, IC=0, f=1MHz 8 NF Noise Figure VCE=5V, IC=0.2mA, f=1KHz RG=2KΩ VCE=5V, IC=0.2mA RG=2KΩ, f=30~15KHz : BC237/238 : BC239 : BC239 V MHz MHz 6 pF pF 2 10 4 4 dB dB dB hFE Classification Classification A B C hFE 120 ~ 220 180 ~ 460 380 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC237/238/239 Typical Characteristics 100 IB = 400µA VCE = 5V IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 100 IB = 350µA IB = 300µA 80 IB = 250µA 60 IB = 200µA IB = 150µA 40 IB = 100µA 20 10 1 IB = 50µA 0.1 0.0 0 0 2 4 6 8 10 12 14 16 18 20 VCE = 5V hFE, DC CURRENT GAIN 1000 100 10 1 100 0.8 1.0 1.2 10000 IC = 10 IB V BE(sat) 1000 100 V CE(sat) 10 1000 1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 f=1MHz IE = 0 10 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT 100 Cob[pF], CAPACITANCE 0.6 Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE Figure 1. Static Characteristic 10 0.4 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 1 0.2 VCE = 5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, August 2002 BC237/238/239 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1