VS-HFA16PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • • • • Base common cathode 2 Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS TO-247AC • • • • • 1 3 Anode Anode 2 1 2 Common cathode DESCRIPTION VS-HFA16PA60CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A per leg continuous current, the VS-HFA16PA60CPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16PA60CPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-247AC IF(AV) 2x8A VR 600 V VF at IF 1.7 V trr (typ.) 18 ns TJ max. 150 °C Diode variation Single die Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 600 V 8 16 Single pulse forward current IFSM 60 Maximum repetitive forward current IFRM 24 Maximum power dissipation Operating junction and storage temperature range Document Number: 94056 Revision: 23-May-11 PD TJ, TStg TC = 25 °C 36 TC = 100 °C 14 - 55 to + 150 A W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 8.0 A Maximum forward voltage VFM IF = 16 A See fig. 1 IF = 8.0 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V LS Measured lead to lead 5 mm from package body Series inductance TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 - 1.4 1.7 UNITS V - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH μA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 18 - trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V trr1 TJ = 25 °C - 37 55 trr2 TJ = 125 °C - 55 90 - 3.5 5.0 - 4.5 8.0 - 65 138 - 124 360 UNITS ns IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C Reverse recovery charge See fig. 9 and 10 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C Peak rate of fall recovery current during tb See fig. 11 and 12 dI(rec)M/dt1 TJ = 25 °C - 240 - dI(rec)M/dt2 TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS - - 300 °C - - 3.5 - - 1.75 Peak recovery current See fig. 7 and 8 IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Junction to case, single leg conducting Junction to case, SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s RthJC both leg conducting K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC (JEDEC) g HFA16PA60C For technical questions within your region, please contact one of the following: Document Number: 94056 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PA60CPbF 100 Vishay Semiconductors 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.1 0.001 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 VFM - Forward Voltage Drop (V) 94056_01 100 300 400 500 600 VR - Reverse Voltage (V) 94056_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) 200 Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 10 1 94056_03 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 10 1 0.1 Single pulse (thermal response) 0.01 0.00001 94056_04 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94056 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PA60CPbF Vishay Semiconductors 80 HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A 500 IF = 16 A IF = 8.0 A IF = 4.0 A 400 IF = 16 A IF = 8.0 A IF = 4.0 A Qrr (nC) trr (ns) 60 40 300 VR = 200 V TJ = 125 °C TJ = 25 °C 200 20 0 100 100 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 1000 dIF/dt (A/µs) 94056_05 Irr (A) 12 IF = 16 A IF = 8.0 A IF = 4.0 A Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/µs) 16 dIF/dt (A/µs) 94056_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 20 1000 8 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8.0 A IF = 4.0 A 1000 4 100 0 100 94056_06 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 100 1000 94056_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions within your region, please contact one of the following: Document Number: 94056 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PA60CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94056 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16PA60CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 8 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 16 PA 60 C PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (16 = 16 A) 5 - PA = TO-247AC 6 - Voltage rating: (60 = 600 V) 7 - Circuit configuration C = Common cathode 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94056 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1