AM1214-325 .. .. .. .. RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325 PIN CONNECTION DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPAC Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case Symbol PDISS IC VCC TJ T STG = 1. Collector 2. Base 3. Emitter 4. Base 25 ° C) Parameter Value Unit 1250 W Device Current* 25 A Collector-Supply Voltage* 45 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.10 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-325 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 65 — — V BVEBO IE = 15mA IC = 0mA 3.0 — — V BVCES IC = 50mA 65 — — V ICES VCE = 50V — — 30 mA hFE VCE = 5V 10 — — — IC = 5A DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT ηc f = 1200 — 1400MHz PIN = 75W VCC = 45V 325 360 — W f = 1200 — 1400MHz PIN = 75W VCC = 45V 38 45 — % GP f = 1200 — 1400MHz PIN = 75W VCC = 45V 6.4 6.8 — dB Note: Pul se Widt h Duty Cycle = = 13 µ Sec 2% TYPICAL PERFORMANCE POWER OUTPUT & EFFICIENCY vs FREQUENCY 2/4 Min. AM1214-325 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL FREQ. ZIN (Ω) ZCL (Ω) L = 1.2 GHz 4.0 + j 3.5 3.0 − j 3.0 M = 1.3 GHz 3.0 + j 4.0 2.0 − j 2.5 H = 1.4 GHz 2.0 + j 3.5 1.0 − j 2.0 PIN = 75 W VCC = 45 V Normalized to 50 ohms TEST CIRCUIT 3/4 AM1214-325 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4