STMICROELECTRONICS SD1541-1

SD1541-01
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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..
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DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
400 (min.) DME 1025 - 1150 MHz
6.5 dB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT
SPECIFICIED OPERATING CONDITIONS
INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
SD1541-01
BRANDING
SD1541-1
PIN CONNECTION
DESCRIPTION
The SD1541-01 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154101 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
Device Current
22
A
Power Dissipation
1458
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
0.12
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
November 1992
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SD1541-01
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 25mA
IE = 0mA
65
—
—
V
BVCES
IC = 50mA
VBE = 0V
65
—
—
V
BVEBO
IE = 10mA
IC = 0mA
3.5
—
—
V
ICES
VCE = 50V
IE = 0mA
—
—
25
mA
hFE
VCE = 5V
IC = .25A
5
—
200
—
DYNAMIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 1025 — 1150MHz PIN = 90 W
VCE = 50 V
400
—
—
W
GP
f = 1025 — 1150MHz PIN = 90 W
VCE = 50 V
6.5
—
—
dB
Note:
Pulse W idth = 10 µSec, Duty Cycle = 1%
This device i s sui table f or use under other pulse widt h/duty cycle condit ions.
Please contact the fact ory for specific appli cat ions assi stance.
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
2/5
POWER OUTPUT vs FREQUENCY
SD1541-01
IMPEDANCE DATA
1020 MHz
ZIN (Ω)
2.898 + j 4.1
Z CL (Ω)
1.382 − j 3.2
1090 MHz
2.325 + j 3.4
1.338 − j 2.8
1150 MHz
1.994 + j 2.8
1.269 − j 2.5
FREQ.
TEST CIRCUIT
All Dimensions in Inches Unless Otherwise specified
C1
: 0.4 - 2.5pF Johanson Gigatrim
C2, C3,
C4
: 0.6 - 4.5pF Johanson Gigatrim
C5
: 82pF Chip Capacitor, .055 Sq.
L1
L2
: Loop, #18 Tinned, .36 Wide x .27 above Circuit
: 4 3/4 Turns, #24 En., C.W., .075 I.D.
Z1
Z2
: 50Ω(.02 Wide)
: .250 x .120
Z3
Z4
Z5
Z6
Z7
Z8
Z9
:
:
:
:
:
:
:
50Ω .020 x .330; C1 tapped .15 from Load
.145 x .920
.325 x .180
.730 x .315
.710 x .425 with .140 x .150 cutout
.35 x .780; C4 Tapped .36 from Cen
50Ω
C1, C4 : Cold End Terminated Through Eyelet.
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SD1541-01
PC BOARD LAYOUT
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SD1541-01
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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