AM83135-005 .. .. .. .. RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NL FL (S042) hermetically sealed O RDER CODE AM83135-005 BRANDING 83135-5 DESCRIPTION The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. PIN CONNECTION This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-005 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC VCC TJ TSTG Parameter Value Un it 40 W Device Current* 1.8 A Collector-Supply Voltage* 34 V J un ction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 3.75 °C/W P ower Dissipation* (TC ≤ 100°C) S torage Temperature THERMAL DATA RTH(j-c) J un ction-Cas e Thermal R e sistance* *Applies only to rated RF a mplifier oper ation August 23, 1996 1/4 AM83135-005 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symb ol Value Test Con ditio ns Min. T yp. Max. Unit BVCBO IC = 4 mA IE = 0 mA 50 — — V BVEBO IE = 2 mA IC = 0 mA 3.5 — — V BVCER IC = 4 mA RBE = 10 Ω 50 — — V ICES VCE = 30 V — — 2.0 mA hFE VCE = 5 V 10 — — — IC = 500 mA DYNAMIC Symb ol Value T est Co nditi ons Min. Typ . Max. Un it POUT f = 3.1 − 3.5 GHz PIN = 1.5 W VCC = 30 V 5.0 6.0 — W hc f = 3.1 − 3.5 GHz POUT = 5.0 W VCC = 30 V 27 — — % PG f = 3.1 − 3.5 GHz POUT = 5.0 W VCC = 30 V 5.2 6.4 — dB Note: P uls e Wi dth D uty Cycl e 2/4 = = 100 µ S 10% AM83135-005 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN L TYPICAL COLLECTOR LOAD IMPEDANCE ZIN H ZCL ZCL L = 2.7 GHz ZIN (Ω) 9.0 j 22.0 ZCL (Ω) 48.0 + j 11.5 ù = 2.9 GHz 9.0 j 23.0 43.0 + j 9.0 M = 3.1 GHz 12.5 + j 25.0 30.0 + j 3.0 ù = 3.3 GHz 20.0 + j 25.0 21.5 + 0.0 H = 3.5 GHz 22.0 + j 22.5 16.0 − j 3.0 FREQ. L H PIN = 1.5 W VCC = 30 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate Material: .025 tick Al 203 (Er = 9.6) C1 C2 C3 : 100 pF Chip Capacitor (Note: Mounted on its thin side) : 1500 pF RF Feedthru : 100 mF Electrolytic L1 L2 : No. 32 Wire, 2 Turns 1/16” I.D. : Printed Choke 3/4 AM83135-005 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0213 rev. A UDCS Doc. No. 1011416 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - 4/4