BAR 18 BAS70-04 06 ® SMALL SIGNAL SCHOTTKY DIODES A1 K2 K K1 N.C. A2 A BAR18 BAS70-04 A K K1 A1 A2 K2 BAS70-06 BAS70-05 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. SOT-23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Value Unit Repetitive peak reverse voltage 70 V IF Continuous forward current 70 mA Ptot Power dissipation (note 1) 250 mW Tstg Maximum storage temperature range - 65 to +150 °C VRRM Parameter Tamb = 25°C Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during 10s 260 °C Note 1: for double diodes, Ptot is the total dissipation of both diodes * : dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a) THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient (*) Value Unit 500 °C/W (*) Mounted on epoxy board with recommended pad layout. December 2001 - Ed: 3A 1/4 BAR 18 / BAS70-04 06 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tj = 25°C IR = 10µA VF * Tj = 25°C IF = 1mA 410 mV IR ** Tj = 25°C VR = 50V 200 nA Max. Unit 2 pF 100 ps Pulse test: 70 V * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2% DYNAMIC CHARACTERISTICS Symbol Test Conditions C Tj = 25°C VR = 0V F = 1MHz τ* Tj = 25°C Krakauer Method IF = 5mA Min. Typ. * Effective carrier life time. Fig. 1-1: Forward voltage drop versus forward current (low level). Fig. 1-2: Forward voltage drop versus forward current (high level). IFM(A) IFM(A) 2.0E-2 1.8E-2 1.6E-2 1.4E-2 1.2E-2 1.0E-2 8.0E-3 6.0E-3 4.0E-3 2.0E-3 0.0E+0 0.0 2/4 7E-2 Tj=100°C Typical values Tj=100°C Typical values 1E-2 Tj=25°C Maximum values Tj=25°C Maximum values Tj=25°C Typical values 1E-3 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 Tj=25°C Typical values VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BAR 18 / BAS70-04 06 Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). Fig. 3: Reverse leakage current versus junction temperature (typical values) IR(µA) IR(µA) 5E+2 1E+1 VR=70V Tj=100°C 1E+2 1E+0 1E+1 1E-1 1E+0 Tj=25°C 1E-2 1E-1 Tj(°C) VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Fig. 4: Junction capacitance versus reverse voltage applied (typical values). 1E-2 0 25 50 75 100 125 150 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm*8mm*0.5mm). C(pF) Zth(j-a)/Rth(j-a) 2.0 1.00 F=1MHz Tj=25°C δ = 0.5 1.0 δ = 0.2 0.10 δ = 0.1 T 0.1 Single pulse VR(V) 1 10 100 0.01 1E-3 tp(s) 1E-2 1E-1 δ=tp/T 1E+0 1E+1 tp 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 350 P=0.25W 300 250 200 S(Cu) (mm²) 150 0 5 10 15 20 25 30 35 40 45 50 3/4 BAR 18 / BAS70-04 06 PACKAGE MECHANICAL DATA SOT23 (Plastic) A E DIMENSIONS REF. e D e1 B A S A1 L H Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0.004 A1 0 0.1 0 B 0.3 0.51 0.012 0.02 c 0.085 0.18 0.003 0.007 D 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 e1 1.7 2.1 0.067 0.083 E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108 L c Millimeters S 0.6 typ. 0.35 0.65 0.024 typ. 0.014 0.026 FOOTPRINT DIMENSIONS 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 ■ Ordering type Marking Package Weight Base qty Delivery mode BAR18 D76 SOT-23 0.01g 3000 Tape & reel BAS70-04 D96 SOT-23 0.01g 3000 Tape & reel BAS70-05 D97 SOT-23 0.01g 3000 Tape & reel BAS70-06 D98 SOT-23 0.01g 3000 Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4