STPS3L60S ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 60 V Tj (max) 150°C VF (max) 0.65 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE DESCRIPTION Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is intended for use in DC/DC chargers. SMC (JEDEC DO-214AB) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current Tc = 100°C δ = 0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp=2 µs square F=1kHz 1 A Tstg Storage temperature range - 65 to + 175 °C 150 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j−a) July 1999 - Ed: 1A 1/4 STPS3L60S THERMAL RESISTANCES Symbol Parameter Rth(j-l) Value Unit 20 °C/W Junction to leads STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter VF * Tests conditions Reverse leakage current Tj = 25°C Forward voltage drop Tj = 125°C Tj = 25°C IF = 3 A Tj = 125°C IF = 3 A Tj = 25°C IF = 6 A Tj = 125°C IF = 6 A Min. Typ. Max. 55 Unit µA 10 15 mA 0.7 V VR = VRRM 0.56 0.65 0.94 0.67 0.76 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.54 x IF(AV) + 0.037 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature(δ = 0.5). PF(av)(W) 2.5 3.5 IF(av)(A) δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 2.0 Rth(j-a)=Rth(j-l) 3.0 δ=1 2.5 1.5 2.0 1.0 1.5 1.0 T 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IM(A) 14 12 10 Tc=25°C 6 Tc=50°C 4 IM 2 0 1E-3 2/4 Tc=100°C t t(s) δ=0.5 1E-2 1E-1 δ=tp/T tp Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). 8 T 0.5 δ=tp/T IF(av) (A) Rth(j-a)=75°C/W 1E+0 0.0 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Relative variation of thermal impedance junction to lead versus pulse duration. Zth(j-l)/Rth(j-l) 1.0 0.9 0.8 0.7 δ = 0.5 0.6 0.5 0.4 δ = 0.2 0.3 δ = 0.1 0.2 Single pulse 0.1 0.0 1E-3 T δ=tp/T tp(s) 1E-2 1E-1 tp 1E+0 STPS3L60S Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 5E+1 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 500 Tc=150°C 1E+1 F=1MHz Tj=25°C Tc=125°C 200 Tc=100°C 1E+0 100 Tc=75°C 1E-1 1E-2 1E-3 50 Tc=50°C Tc=25°C 20 VR(V) 0 5 VR(V) 10 15 20 25 30 35 40 45 50 55 60 Fig. 7-1: Forward voltage drop versus forward current (low level, maximum values). IFM(A) 5.0 Tj=150°C 4.5 (typical values) 4.0 Tj=25°C 3.5 3.0 Tj=125°C 2.5 2.0 1.5 1.0 0.5 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 1 10 100 Fig. 7-2: Forward voltage drop versus forward current (high level, maximum values). 20 IFM(A) 10 Tj=150°C (typical values) Tj=25°C Tj=125°C 5 2 1 0.2 VFM(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35mm) 100 Rth(j-a) (°C/W) 80 60 40 20 S(Cu) (cm²) 0 0 1 2 3 4 5 3/4 STPS3L60S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. A1 A2 b c E E1 E2 D L D E A1 Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 A2 C L E2 b FOOT PRINT ( in millimeters) 3.3 2.0 4.2 2.0 Ordering type Marking Package Weight Base qty Delivery mode STPS3L60S S36 SMC 0.24g 2500 Tape and reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4