STPS3045G ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 30 A VRRM 45 V Tj (max) 175°C VF (max) 0.63 V K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE HIGH DISSIPATION MINIATURE PACKAGE A A D2PAK DESCRIPTION Single Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D2PAK surface mount package , this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current Tc = 150°C δ = 0.5 30 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 200 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A IRSM Non Repetitive peak reverse current tp = 100µs square 3 A Tstg Storage temperature range - 65 to + 175 °C 175 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature* Critical rate of rise of reverse voltage dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj October 1999 - Ed: 4A 1/5 STPS3045G THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Value Unit 1 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Forward voltage drop Pulse test : Max. Unit 500 µA 20 80 mA 0.53 0.63 V VR = VRRM Tj = 125°C VF ** Typ. Tj = 125°C IF = 30 A Tj = 25°C IF = 60 A Tj = 125°C IF = 60 A 0.84 0.68 0.78 * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.48 x IF(AV) + 0.005 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) PF(av)(W) 25 δ = 0.1 δ = 0.2 35 δ = 0.5 Rth(j-a)=Rth(j-c) 30 δ = 0.05 20 δ=1 25 15 20 10 15 10 T 5 0 0 2/5 5 10 15 20 25 30 δ=tp/T 5 δ=tp/T IF(av) (A) T Rth(j-a)=30°C/W 35 40 0 tp Tamb(°C) tp 0 25 50 75 100 125 150 175 STPS3045G Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 400 350 0.8 300 250 δ = 0.5 0.6 Tc=75°C 200 Tc=100°C 0.4 150 δ = 0.2 Tc=125°C 100 IM 50 T δ = 0.1 0.2 t(s) t δ=0.5 tp(s) Single pulse 0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) 0.0 1E-4 1E-3 δ=tp/T 1E-2 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(nF) IR(µA) 5.0 1E+5 F=1MHz Tj=25°C Tj=150°C 1E+4 Tj=125°C Tj=100°C 1E+3 1.0 Tj=75°C 1E+2 Tj=50°C 1E+1 Tj=25°C VR(V) 1E+0 0 5 10 15 20 25 VR(V) 30 35 40 45 Fig. 7: Forward voltage drop versus forward current (maximum values). 0.1 1 2 5 10 20 50 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) IFM(A) Rth(j-a) (°C/W) 80 200 100 70 Typical values Tj=125°C 60 Tj=25°C 50 40 10 Tj=125°C 30 20 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 S(Cu) (cm²) 0 2 4 6 8 10 12 14 16 18 20 3/5 STPS3045G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E Min. C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 4/5 Millimeters A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° STPS3045G Type Marking Package Weight Base qty Delivery mode STPS3045G STPS3045G D2PAK 1.48g 50 Tube 1.48g 500 Tape & Reel STPS3045G-TR STPS3045G 2 D PAK Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5