STMICROELECTRONICS STPS0540Z_02

STPS0540Z / STPS0560Z
®
SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
0.5 A
VRRM
40 / 60V
VF (max)
0.40 / 0.50V
FEATURES AND BENEFITS
■
■
■
Very small conduction losses
Negligible switching losses
Extremely fast switching
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
SOD-123
Packages in SOD-123, these devices are intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
Due to the small size of the package these devices
fit GSM and PCMCIA requirements.
ABSOLUTE RATINGS (limiting values)
Value
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
IF(AV)
Average forward current
δ=0.5
IFSM
Surge non repetitive forward current
dV/dt
Critical rate of rise of reverse voltage
Tstg
* :
STPS
STPS0540Z
STPS0560Z
Storage temperature range
Unit
0540Z
0560Z
40
60
V
2
A
Ta= 60°C
Ta= 40°C
0.5
A
tp=10ms
sinusoidal
5.5
A
10000
V/µs
- 65 to + 150
°C
Tj
Maximum operating junction temperature *
150
°C
TL
Maximum temperature for soldering during 10s
260
°C
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
January 2002 - Ed : 2B
1/5
STPS0540Z / STPS0560Z
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient (*)
Value
Unit
340
°C/W
(*) Mounted on epoxy board.
STATIC ELECTRICAL CHARACTERISTICS
Value
Symbol
Parameter
Tests conditions
STPS0540Z
typ.
IR *
VF **
Reverse leakage
current
Forward
voltage drop
Tj=25°C
Tj=100°C
IF = 0.5 A
5
1
0.50
0.35
IF = 1 A
0.40
0.44
0.55
0.45
0.51
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
STPS0540Z: P = 0.29 x IF(AV) + 0.22 x IF2(RMS)
STPS0560Z: P = 0.35 x IF(AV) + 0.3 x IF2(RMS)
2/5
typ.
40
1.5
Tj=100°C
Tj=25°C
Pulse test :
VR = VRRM
T =100°C
Tj=25°C
max.
STPS0560Z
max.
50
µA
4
mA
0.53
V
0.50
0.66
0.58
Unit
0.65
STPS0540Z / STPS0560Z
Fig. 1-1: Average forward power dissipation versus average forward current.(STPS0540Z)
Fig. 1-2: Average forward power dissipation versus average forward current.(STPS0560Z)
PF(av)(W)
PF(av)(W)
0.30
δ = 0.1
δ = 0.05
0.35
δ = 0.2
δ = 0.5
0.25
δ = 0.1
δ = 0.05
0.30
δ = 0.2
δ = 0.5
0.25
0.20
δ=1
δ=1
0.20
0.15
0.15
0.10
0.10
T
0.05
IF(av) (A)
0.00
0.0
0.1
0.2
0.3
δ=tp/T
0.4
T
0.05
IF(av) (A)
tp
0.5
0.6
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
0.00
0.0
0.1
0.2
0.3
δ=tp/T
0.4
tp
0.5
0.6
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
IF(av)(A)
IM(A)
0.6
4.0
0.5
3.5
Ta = 25°C
STPS0540Z
0.4
3.0
0.3
2.0
0.2
1.5
T
1.0
0.1
0.0
δ=tp/T
0
tp
25
50
75
IM
100
125
t(s)
t
0.0
1E-3
δ=0.5
1E-2
1E-1
1E+0
Fig. 5-1: Reverse leakage current versus reverse
voltage applied (typical values).(STPS0540Z)
IR(mA)
Zth(j-a)/Rth(j-a)
5E+1
δ = 0.5
δ = 0.2
1E-1
STPS0560Z
0.5
Tamb(°C)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (Epoxy
printed circuit board FR4 with recommended pad
layout).
1E+0
STPS0540Z
2.5
STPS0560Z
δ = 0.1
1E+1
Tj=125°C
1E+0
Tj=100°C
Tj=70°C
1E-1
1E-2
1E-2
tp(s)
1E-3
1E-3
Tj=25°C
T
Single pulse
1E-2
1E-1
1E+0
1E-3
δ=tp/T
1E+1
VR(V)
tp
1E+2
1E-4
0
5
10
15
20
25
30
35
40
3/5
STPS0540Z / STPS0560Z
Fig. 5-2: Reverse leakage current versus reverse
voltage applied (typical values).(STPS0560Z)
Fig. 6: Reverse leakage current versus junction
temperature (typical values).
IR(mA)
IR[Tj] / IR[Tj=25°C]
5E+1
1E+3
VR=VRRM
Tj=125°C
1E+1
1E+0
1E-1
Tj=100°C
1E+2
Tj=70°C
1E+1
Tj=25°C
1E+0
1E-2
1E-3
Tj(°C)
VR(V)
1E-4
0
5
10 15 20 25 30 35 40 45 50 55 60
Fig. 7: Junction capacitance versus reverse voltage applied (typical values).
1E-1
0
25
50
75
100
125
Fig. 8-1: Forward voltage drop versus forward current (maximum values).(STPS0540Z)
C(pF)
IFM(A)
200
5E+0
F=1MHz
Tj=25°C
100
STPS0540Z
50
STPS0560Z
1E+0
Tj=100°C
Typical values
Tj=100°C
1E-1
Tj=25°C
1E-2
20
VR(V)
10
1
2
5
10
20
40
60
Fig. 8-2: Forward voltage drop versus forward current (maximum values).(STPS0560Z)
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig. 9: Variation of thermal resistance junction to
ambient versus copper surface under each lead
(Printed circuit board FR4, e(Cu) = 35µm).
IFM(A)
Rth(j-a) (°C/W)
5E+0
350
Tj=100°C
Typical values
1E+0
P=0.25W
300
Tj=100°C
250
1E-1
Tj=25°C
200
1E-2
150
S(Cu) (mm²)
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
4/5
100
0
20
40
60
80
100
STPS0540Z / STPS0560Z
PACKAGE MECHANICAL DATA
SOD-123
H
DIMENSIONS
A2
A1
b
REF.
Millimeters
Min.
E
Max.
A
A
D
c
G
Inches
Min.
1.45
Max.
0.057
A1
0
0.1
0
0.004
A2
0.85
1.35
0.033
0.053
b
0.55 Typ.
0.022 Typ.
c
0.15 Typ.
0.039 Typ.
D
2.55
2.85
0.1
0.112
E
1.4
1.7
0.055
0.067
G
0.25
H
3.55
0.01
3.95
0.14
0.156
FOOTPRINT (in millimeters)
4.45
0.65
0.97
2.51
0.97
MARKING
■
■
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS0540Z
Z54
SOD-123
0.01 g
3000
Tape & reel
STPS0560Z
Z56
SOD-123
0.01 g
3000
Tape & reel
Epoxy meets UL94, V0.
Band indicates cathode.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5